IPS110N12N3G - параметры транзистора MOSFET, его аналоги, datasheet

IPS110N12N3G Datasheet (PDF)

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MOSFETMetal Oxide Semiconductor Field Effect TransistorOptiMOS Power-Transistor, 120VOptiMOS 3 Power-TransistorIPD_S110N12N3 GData SheetRev. 2.4FinalIndustrial & MultimarketIPD110N12N3 G IPS110N12N3 GOptiMOSTM3Power-TransistorProduct SummaryFeaturesVDS 120 V N-channel, normal levelRDS(on),max11m Excellent gate charge x R product (FOM)DS(on)

3.1. Size:261K inchange semiconductor
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isc N-Channel MOSFET Transistor IPS110N12N3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

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$& " " $;B1= '=-:>5>?;=$=;0@/? &@99-=DFeatures 100 VDSR ( 492??6= ?@C>2= =6G6= 11.8 m DS(on) maxR I46==6?E 82E6 492C86 I AC@5F4E !) ' DS(on) 75 ADR /6CJ =@H @? C6D:DE2?46 DS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?49C@?@FD C64E:7:4

Другие MOSFET... IPP90R800C3 , IPS031N03LG , IPS040N03LG , IPS050N03LG , IPS060N03LG , IPS075N03LG , IPS090N03LG , IPS105N03LG , AO3401 , IPS118N10NG , IPS12CN10LG , IPS135N03LG , IPS50R520CP , IPU039N03LG , IPU050N03LG , IPU060N03LG , IPU075N03LG .