All MOSFET. IPU135N08N3G Datasheet

 

IPU135N08N3G Datasheet and Replacement


   Type Designator: IPU135N08N3G
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 79 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 353 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0135 Ohm
   Package: TO251
 

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IPU135N08N3G Datasheet (PDF)

 3.1. Size:597K  infineon
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IPU135N08N3G

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 6.1. Size:537K  infineon
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IPU135N08N3G

Type IPD135N03L G IPF135N03L GIPS135N03L G IPU135N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 13.5mDS(on),max Optimized technology for DC/DC convertersI 30 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very

 6.2. Size:1397K  infineon
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IPU135N08N3G

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 6.3. Size:260K  inchange semiconductor
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IPU135N08N3G

isc N-Channel MOSFET Transistor IPU135N03LFEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: IPS50R520CP , IPU039N03LG , IPU050N03LG , IPU060N03LG , IPU075N03LG , IPU090N03LG , IPU103N08N3G , IPU135N03LG , 8N60 , IPW50R140CP , IPW50R199CP , IPW50R250CP , IPW50R299CP , IPW50R350CP , IPW50R399CP , IPW60R041C6 , IPW60R045CP .

History: IPB65R095C7 | 2N60G-AA3-R | 2N7002CK | BUK9K18-40E | YJG90G10A | STN3414 | CS6N70F

Keywords - IPU135N08N3G MOSFET datasheet

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