All MOSFET. IPW60R160C6 Datasheet

 

IPW60R160C6 Datasheet and Replacement


   Type Designator: IPW60R160C6
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 176 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 23.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 13 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.16 Ohm
   Package: TO247
 

 IPW60R160C6 substitution

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IPW60R160C6 Datasheet (PDF)

 ..1. Size:1019K  infineon
 ipa60r160c6 ipb60r160c6 ipp60r160c6 ipw60r160c6.pdf pdf_icon

IPW60R160C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunct

 ..2. Size:1965K  infineon
 ipw60r160c6.pdf pdf_icon

IPW60R160C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R160C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R160C6, IPB60R160C6IPP60R160C6 IPW60R160C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superj

 ..3. Size:242K  inchange semiconductor
 ipw60r160c6.pdf pdf_icon

IPW60R160C6

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R160C6IIPW60R160C6FEATURESStatic drain-source on-resistance:RDS(on)160mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So

 5.1. Size:2645K  infineon
 ipw60r160p6 ipb60r160p6 ipp60r160p6 ipa60r160p6.pdf pdf_icon

IPW60R160C6

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R160P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R160P6, IPB60R160P6, IPP60R160P6,IPA60R160P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,

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Datasheet: IPW60R070C6 , IPW60R075CP , IPW60R075CPA , IPW60R099C6 , IPW60R099CP , IPW60R099CPA , IPW60R125C6 , IPW60R125CP , IRF540N , IPW60R165CP , IPW60R190C6 , IPW60R190E6 , IPW60R199CP , IPW60R250CP , IPW60R280C6 , IPW60R280E6 , IPW60R299CP .

History: FHD630A | WMB010N04LG4 | HRLU55N03K | AOL1426 | IXTT140N10P | SSM3K7002CFU

Keywords - IPW60R160C6 MOSFET datasheet

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