IPW60R190E6
MOSFET. Datasheet pdf. Equivalent
Type Designator: IPW60R190E6
Marking Code: 6R190E6
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 151
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5
V
|Id|ⓘ - Maximum Drain Current: 20.2
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 63
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 85
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19
Ohm
Package:
TO247
IPW60R190E6
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPW60R190E6
Datasheet (PDF)
..1. Size:851K infineon
ipw60r190e6 ipp60r190e6 ipa60r190e6.pdf 
C lMO e n i t I 1 I 1 I 1 O 47 O O 1 Descriptint bC lMO i e l ti n te n l i lt e p eMO e i ne in t t e pej n ti n ) pin iple n pi neee b In ine n e n l ie C lMO eie mbine t eexpeien e t e le in MO pplie it i l inn ti n e e ltin e i e p i e ll bene it t it in MO ile n t i i in e e e xtemel l it in n n ti nl e m ke it in
..2. Size:1150K infineon
ipw60r190e6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R190E6Data SheetRev. 2.0, 2010-05-03FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R190E6, IPA60R190E6IPW60R190E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)
..3. Size:242K inchange semiconductor
ipw60r190e6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R190E6IIPW60R190E6FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
5.1. Size:1494K infineon
ipw60r190c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.1, 2010-02-09FinalIndustrial & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according
5.2. Size:2872K infineon
ipa60r190p6 ipp60r190p6 ipw60r190p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPP60R190P6, IPA60R190P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
5.3. Size:1214K infineon
ipa60r190c6 ipb60r190c6 ipi60r190c6 ipp60r190c6 ipw60r190c6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS C6 600V600V CoolMOS C6 Power TransistorIPx60R190C6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS C6 Power Transistor IPA60R190C6, IPB60R190C6IPI60R190C6, IPP60R190C6IPW60R190C61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to
5.4. Size:3091K infineon
ipw60r190p6 ipb60r190p6 ipp60r190p6 ipa60r190p6.pdf
MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R190P6Data SheetRev. 2.2FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R190P6, IPB60R190P6, IPP60R190P6,IPA60R190P6TO-247 DPAK TO-2201 DescriptiontabtabCoolMOS is a revolutionary technology for high voltage powerMOSFETs,
5.5. Size:269K inchange semiconductor
ipw60r190c6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R190C IIPW60R190C6FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Sour
5.6. Size:243K inchange semiconductor
ipw60r190p6.pdf
INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPW60R190P6IIPW60R190P6FEATURESStatic drain-source on-resistance:RDS(on)190mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONFast switchingABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-So
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