IPW60R280E6 Datasheet and Replacement
Type Designator: IPW60R280E6
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 104 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 13.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9 nS
Cossⓘ - Output Capacitance: 60 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO247
IPW60R280E6 substitution
IPW60R280E6 Datasheet (PDF)
ipp60r280e6 ipa60r280e6 ipw60r280e6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6 600V600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.3FinalPower Management & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ) pri
ipw60r280e6 2.0.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS E6600V CoolMOS E6 Power TransistorIPx60R280E6Data SheetRev. 2.0, 2010-04-09FinalIndustrial & Multimarket600V CoolMOS E6 Power Transistor IPP60R280E6, IPA60R280E6IPW60R280E61 DescriptionCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed according to the superjunction (SJ)
ipw60r280e6.pdf

isc N-Channel MOSFET Transistor IPW60R280E6IIPW60R280E6FEATURESStatic drain-source on-resistance:RDS(on) 0.28Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONProvide all benefits of a fast switching SJ MOSFET while notsacrificing ease of useABSOL
ipa60r280p6 ipp60r280p6 ipw60r280p6.pdf

MOSFETMetal Oxide Semiconductor Field Effect TransistorCoolMOS P6600V CoolMOS P6 Power TransistorIPx60R280P6Data SheetRev. 2.1FinalPower Management & Multimarket600V CoolMOS P6 Power TransistorIPW60R280P6, IPP60R280P6, IPA60R280P6TO-247 TO-220 TO-220 FP1 DescriptiontabCoolMOS is a revolutionary technology for high voltage powerMOSFETs, designed accordi
Datasheet: IPW60R125CP , IPW60R160C6 , IPW60R165CP , IPW60R190C6 , IPW60R190E6 , IPW60R199CP , IPW60R250CP , IPW60R280C6 , IRF640N , IPW60R299CP , IPW65R070C6 , IPW65R080CFD , IPW65R280C6 , IPW65R280E6 , IPW65R660CFD , IPW90R120C3 , IPW90R1K0C3 .
History: BSS138PW
Keywords - IPW60R280E6 MOSFET datasheet
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History: BSS138PW



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