IPW90R120C3 MOSFET Datasheet: N-Ch, 900V, 36A. Full specification with pinout and replacement list

IPW90R120C3 Specs and Replacement

   Type Designator: IPW90R120C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 417 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 36 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

   tr ⓘ - Rise Time: 20 nS
   Cossⓘ - Output Capacitance: 330 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: TO247

IPW90R120C3 substitution

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IPW90R120C3 datasheet

..1. Size:548K infineon
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7.1. Size:644K infineon
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IPW90R1K2C3 C IMOS # A0IN U . J6A>;> 9 for industrial grade applications 688DG9>CC6CI U 2 AIG6 ADL ... See More ⇒

7.2. Size:548K infineon
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IPW90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25 C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25 C 1.0 DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO247 Ultra low gate charge CoolMOS 90... See More ⇒

7.3. Size:243K inchange semiconductor
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isc N-Channel MOSFET Transistor IPW90R1K2C3 IIPW90R1K2C3 FEATURES Static drain-source on-resistance RDS(on) 1.2 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒

Detailed specifications: IPW60R280C6 , IPW60R280E6 , IPW60R299CP , IPW65R070C6 , IPW65R080CFD , IPW65R280C6 , IPW65R280E6 , IPW65R660CFD , AON6414A , IPW90R1K0C3 , IPW90R1K2C3 , IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , SPA02N80C3 , SPA03N60C3 , SPA04N50C3 .