All MOSFET. IPW90R120C3 Datasheet

 

IPW90R120C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: IPW90R120C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 417 W

Maximum Drain-Source Voltage |Vds|: 900 V

Maximum Drain Current |Id|: 36 A

Total Gate Charge (Qg): 260 nC

Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm

Package: TO247

IPW90R120C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

IPW90R120C3 Datasheet (PDF)

1.1. ipw90r120c3 1[1].0 pcn.pdf Size:548K _infineon

IPW90R120C3
IPW90R120C3

IPW90R120C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T =25C 0.12 ? DS(on),max J Extreme dv/dt rated Q 270 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO247 PG-TO247 DS,on Ultra low gate charg

3.1. ipw90r1k0c3 1[1].0 pcn.pdf Size:548K _infineon

IPW90R120C3
IPW90R120C3

IPW90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 1.0 ? DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO247 Ultra low gate charge CoolMOS 900V is designed for:

3.2. ipw90r1k2c3 1[1].0 pcn.pdf Size:644K _infineon

IPW90R120C3
IPW90R120C3

IPW90R1K2C3 C??IMOS #:A0< &<,9=4=>:< #<:/?.> %?88,I / M . ON ON g =25C 1.2 W DS(on) max U "MIG:B: 9K 9I G6I:9 28 nC 28 nC g typ U %><= E:6@ 8JGG:CI 86E67>A>IN U . J6A>;>:9 for industrial grade applications 688DG9>C< ID '"!" U -7 ;G:: A:69 EA6I>C< / D%0 8DBEA>6CI U 2 AIG6 ADL <6I: 8=6G<: PG?TO247 C??IMOSD ( 4= /0=4290/ 1:<

Datasheet: IPW60R280C6 , IPW60R280E6 , IPW60R299CP , IPW65R070C6 , IPW65R080CFD , IPW65R280C6 , IPW65R280E6 , IPW65R660CFD , IRF520 , IPW90R1K0C3 , IPW90R1K2C3 , IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , SPA02N80C3 , SPA03N60C3 , SPA04N50C3 .

 
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