IPW90R120C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: IPW90R120C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 417 W
Maximum Drain-Source Voltage |Vds|: 900 V
Maximum Drain Current |Id|: 36 A
Total Gate Charge (Qg): 260 nC
Maximum Drain-Source On-State Resistance (Rds): 0.12 Ohm
Package: TO247
IPW90R120C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
IPW90R120C3 Datasheet (PDF)
1.1. ipw90r120c3 1[1].0 pcn.pdf 
Size:548K _infineon
IPW90R120C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T =25C 0.12 ? DS(on),max J Extreme dv/dt rated Q 270 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Worldwide best R in TO247 PG-TO247 DS,on Ultra low gate charg
3.1. ipw90r1k0c3 1[1].0 pcn.pdf Size:548K _infineon
IPW90R1K0C3 CoolMOS Power Transistor Product Summary Features V @ T =25C 900 V DS J Lowest figure-of-merit RON x Qg R @ T = 25C 1.0 ? DS(on),max J Extreme dv/dt rated Q 34 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO247 Ultra low gate charge CoolMOS 900V is designed for:
3.2. ipw90r1k2c3 1[1].0 pcn.pdf Size:644K _infineon
IPW90R1K2C3
C??IMOS #:A0< &<,9=4=>:<
#<:/?.> %?88,
Datasheet: IPW60R280C6 , IPW60R280E6 , IPW60R299CP , IPW65R070C6 , IPW65R080CFD , IPW65R280C6 , IPW65R280E6 , IPW65R660CFD , IRF520 , IPW90R1K0C3 , IPW90R1K2C3 , IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , SPA02N80C3 , SPA03N60C3 , SPA04N50C3 .
