All MOSFET. SPA02N80C3 Datasheet

 

SPA02N80C3 Datasheet and Replacement


   Type Designator: SPA02N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 30.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 2 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO220FP
 

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SPA02N80C3 Datasheet (PDF)

 ..1. Size:437K  infineon
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SPA02N80C3

SPA02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7DS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci

 ..2. Size:249K  inchange semiconductor
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SPA02N80C3

Isc N-Channel MOSFET Transistor SPA02N80C3FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

Datasheet: IPW65R280E6 , IPW65R660CFD , IPW90R120C3 , IPW90R1K0C3 , IPW90R1K2C3 , IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , AON7408 , SPA03N60C3 , SPA04N50C3 , SPA04N60C3 , SPA04N80C3 , SPA06N60C3 , SPA06N80C3 , SPA07N60C3 , SPA07N60CFD .

History: DMP3020LSS | IRF7739L1

Keywords - SPA02N80C3 MOSFET datasheet

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