All MOSFET. SPA02N80C3 Datasheet

 

SPA02N80C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPA02N80C3
   Marking Code: 02N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 30.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 13 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
   Package: TO220FP

 SPA02N80C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPA02N80C3 Datasheet (PDF)

 ..1. Size:437K  infineon
 spa02n80c3.pdf

SPA02N80C3 SPA02N80C3

SPA02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7DS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci

 ..2. Size:249K  inchange semiconductor
 spa02n80c3.pdf

SPA02N80C3 SPA02N80C3

Isc N-Channel MOSFET Transistor SPA02N80C3FEATURESWith TO-220F packageLow input capacitance and gate chargeReduced switching and conduction losses100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-S

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History: IXFN64N50PD3

 

 
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