SPA02N80C3 Specs and Replacement

Type Designator: SPA02N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 13 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm

Package: TO220FP

SPA02N80C3 substitution

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SPA02N80C3 datasheet

 ..1. Size:437K  infineon
 spa02n80c3.pdf pdf_icon

SPA02N80C3

SPA02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 2.7 DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci... See More ⇒

 ..2. Size:249K  inchange semiconductor
 spa02n80c3.pdf pdf_icon

SPA02N80C3

Isc N-Channel MOSFET Transistor SPA02N80C3 FEATURES With TO-220F package Low input capacitance and gate charge Reduced switching and conduction losses 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-S... See More ⇒

Detailed specifications: IPW65R280E6, IPW65R660CFD, IPW90R120C3, IPW90R1K0C3, IPW90R1K2C3, IPW90R340C3, IPW90R500C3, IPW90R800C3, IRFP250N, SPA03N60C3, SPA04N50C3, SPA04N60C3, SPA04N80C3, SPA06N60C3, SPA06N80C3, SPA07N60C3, SPA07N60CFD

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