All MOSFET. SPA04N50C3 Datasheet

 

SPA04N50C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPA04N50C3
   Marking Code: 04N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 31 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO220FP

 SPA04N50C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPA04N50C3 Datasheet (PDF)

 ..1. Size:289K  1
 spa04n50c3 spb04n50c3 spp04n50c3.pdf

SPA04N50C3 SPA04N50C3

SPP04N50C3, SPB04N50C3Final dataSPA04N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance

 8.1. Size:304K  infineon
 spp04n60c3 spb04n60c3 spa04n60c3.pdf

SPA04N50C3 SPA04N50C3

SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO

 8.2. Size:588K  infineon
 spp04n60c3 spa04n60c3.pdf

SPA04N50C3 SPA04N50C3

VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111

 8.3. Size:426K  infineon
 spa04n80c3.pdf

SPA04N50C3 SPA04N50C3

SPA04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3DS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci

 8.4. Size:255K  inchange semiconductor
 spa04n80c3.pdf

SPA04N50C3 SPA04N50C3

isc N-Channel MOSFET Transistor SPA04N80C3FEATURESWith TO-220F packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: 2SK1237

 

 
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