SPA04N50C3 Datasheet and Replacement
Type Designator: SPA04N50C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 31 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 160 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
Package: TO220FP
SPA04N50C3 substitution
SPA04N50C3 Datasheet (PDF)
spa04n50c3 spb04n50c3 spp04n50c3.pdf

SPP04N50C3, SPB04N50C3Final dataSPA04N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance
spp04n60c3 spb04n60c3 spa04n60c3.pdf

SPP04N60C3, SPB04N60C3Final dataSPA04N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO220-3-31 P-TO263-3-2 P-TO220-3-1 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance P-TO
spa04n80c3.pdf

SPA04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3DS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capaci
Datasheet: IPW90R120C3 , IPW90R1K0C3 , IPW90R1K2C3 , IPW90R340C3 , IPW90R500C3 , IPW90R800C3 , SPA02N80C3 , SPA03N60C3 , K3569 , SPA04N60C3 , SPA04N80C3 , SPA06N60C3 , SPA06N80C3 , SPA07N60C3 , SPA07N60CFD , SPA07N65C3 , SPA08N50C3 .
Keywords - SPA04N50C3 MOSFET datasheet
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