All MOSFET. SPA16N50C3 Datasheet

 

SPA16N50C3 Datasheet and Replacement


   Type Designator: SPA16N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 34 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220FP
 

 SPA16N50C3 substitution

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SPA16N50C3 Datasheet (PDF)

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SPA16N50C3

SPP16N50C3SPI16N50C3, SPA16N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 16 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 Ultra low effective capacitances2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1

Datasheet: SPA11N60C3 , SPA11N60CFD , SPA11N65C3 , SPA11N80C3 , SPA12N50C3 , SPA15N60C3 , SPA15N60CFD , SPA15N65C3 , 4435 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD , SPA20N65C3 , SPA21N50C3 , SPB80N06S-08 , SPB02N60C3 , SPB02N60S5 .

History: IRF7705PBF | CEU07N65A

Keywords - SPA16N50C3 MOSFET datasheet

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