SPA16N50C3 Specs and Replacement
Type Designator: SPA16N50C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 34 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 16 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 800 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
Package: TO220FP
SPA16N50C3 substitution
- MOSFET ⓘ Cross-Reference Search
SPA16N50C3 datasheet
spp16n50c3 spi16n50c3 spa16n50c3 spp16n50c3 spi16n50c3 spa16n50c3 rev.3.2.pdf
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Detailed specifications: SPA11N60C3, SPA11N60CFD, SPA11N65C3, SPA11N80C3, SPA12N50C3, SPA15N60C3, SPA15N60CFD, SPA15N65C3, 5N65, SPA17N80C3, SPA20N60C3, SPA20N60CFD, SPA20N65C3, SPA21N50C3, SPB80N06S-08, SPB02N60C3, SPB02N60S5
Keywords - SPA16N50C3 MOSFET specs
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Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility
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