SPA17N80C3
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPA17N80C3
Marking Code: 17N80C3
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 42
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9
V
|Id|ⓘ - Maximum Drain Current: 17
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 91
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 1250
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29
Ohm
Package:
TO220FP
SPA17N80C3
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPA17N80C3
Datasheet (PDF)
..1. Size:779K infineon
spp17n80c3 spa17n80c3.pdf
SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22
..2. Size:246K inchange semiconductor
spa17n80c3.pdf
isc N-Channel MOSFET Transistor SPA17N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.29Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY
0.1. Size:977K infineon
spp17n80c3 spa17n80c3.rev.2.7.pdf
SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22
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