SPA17N80C3 Datasheet and Replacement
Type Designator: SPA17N80C3
Marking Code: 17N80C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 91 nC
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 1250 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO220FP
SPA17N80C3 substitution
SPA17N80C3 Datasheet (PDF)
spp17n80c3 spa17n80c3.pdf

SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22
spa17n80c3.pdf

isc N-Channel MOSFET Transistor SPA17N80C3FEATURESStatic drain-source on-resistance:RDS(on) 0.29Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSY
spp17n80c3 spa17n80c3.rev.2.7.pdf

SPP17N80C3SPA17N80C3Cool MOS Power TransistorVDS800 VFeatureRDS(on) 0.29 New revolutionary high voltage technologyID 17 A Worldwide best RDS(on) in TO 220PG-TO220-3-31 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 Ultra low effective capacitances Improved transconductance PG-TO-22
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRF530 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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