All MOSFET. SPB80N06S-08 Datasheet

 

SPB80N06S-08 Datasheet and Replacement


   Type Designator: SPB80N06S-08
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 53 nS
   Cossⓘ - Output Capacitance: 1075 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO263
 

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SPB80N06S-08 Datasheet (PDF)

 ..1. Size:208K  1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPB80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 ..2. Size:205K  infineon
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf pdf_icon

SPB80N06S-08

SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive

 5.1. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPB80N06S-08

www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05

 5.2. Size:311K  infineon
spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPB80N06S-08

SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2

Datasheet: SPA15N60CFD , SPA15N65C3 , SPA16N50C3 , SPA17N80C3 , SPA20N60C3 , SPA20N60CFD , SPA20N65C3 , SPA21N50C3 , IRFP450 , SPB02N60C3 , SPB02N60S5 , SPB03N60C3 , SPB03N60S5 , SPB04N50C3 , SPB04N60C3 , SPB04N60S5 , SPB07N60C3 .

History: PE5A0DZ | TPC8203 | SM2603PSC | AP3403GH | F12F50VX2 | IPA50R520CP | CS13N50A8D

Keywords - SPB80N06S-08 MOSFET datasheet

 SPB80N06S-08 cross reference
 SPB80N06S-08 equivalent finder
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 SPB80N06S-08 replacement

 

 
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