SPB08P06PG Specs and Replacement

Type Designator: SPB08P06PG

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 42 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8.8 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 46 nS

Cossⓘ - Output Capacitance: 105 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm

Package: TO263

SPB08P06PG substitution

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SPB08P06PG datasheet

 5.1. Size:235K  infineon
 spb08p06p.pdf pdf_icon

SPB08P06PG

SPB08P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.3 DS(on),max Enhancement mode I -8.8 A D Avalanche rated dv /dt rated 175 C operating temperature PG-TO263-3 Pb-free lead finishing; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Tape and reel information Marking Lead free Packing PG-... See More ⇒

Detailed specifications: SPB02N60S5, SPB03N60C3, SPB03N60S5, SPB04N50C3, SPB04N60C3, SPB04N60S5, SPB07N60C3, SPB07N60S5, 2SK3568, SPB100N03S2-03G, SPB10N10LG, SPB11N60C3, SPB11N60S5, SPB12N50C3, SPB16N50C3, SPB17N80C3, SPB18P06PG

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