All MOSFET. SPB08P06PG Datasheet

 

SPB08P06PG Datasheet and Replacement


   Type Designator: SPB08P06PG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 42 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8.8 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.3 Ohm
   Package: TO263
 

 SPB08P06PG substitution

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SPB08P06PG Datasheet (PDF)

 5.1. Size:235K  infineon
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SPB08P06PG

SPB08P06P GSIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.3DS(on),max Enhancement modeI -8.8 AD Avalanche rated dv /dt rated 175C operating temperaturePG-TO263-3 Pb-free lead finishing; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Tape and reel information Marking Lead free PackingPG-

Datasheet: SPB02N60S5 , SPB03N60C3 , SPB03N60S5 , SPB04N50C3 , SPB04N60C3 , SPB04N60S5 , SPB07N60C3 , SPB07N60S5 , 5N65 , SPB100N03S2-03G , SPB10N10LG , SPB11N60C3 , SPB11N60S5 , SPB12N50C3 , SPB16N50C3 , SPB17N80C3 , SPB18P06PG .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - SPB08P06PG MOSFET datasheet

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