All MOSFET. SPB16N50C3 Datasheet

 

SPB16N50C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPB16N50C3
   Marking Code: 16N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 16 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 66 nC
   trⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO263

 SPB16N50C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPB16N50C3 Datasheet (PDF)

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 spb16n50c3.pdf

SPB16N50C3 SPB16N50C3

SPB16N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 16 A Ultra low gate chargePG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB16N50C3 PG-TO263 Q67040-S4642 16N50C3Maximum Rating

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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