SPB16N50C3 Specs and Replacement

Type Designator: SPB16N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO263

SPB16N50C3 substitution

- MOSFET ⓘ Cross-Reference Search

 

SPB16N50C3 datasheet

 ..1. Size:1347K  infineon
 spb16n50c3.pdf pdf_icon

SPB16N50C3

SPB16N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.28 New revolutionary high voltage technology ID 16 A Ultra low gate charge PG-TO263 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance Type Package Ordering Code Marking SPB16N50C3 PG-TO263 Q67040-S4642 16N50C3 Maximum Rating... See More ⇒

Detailed specifications: SPB07N60C3, SPB07N60S5, SPB08P06PG, SPB100N03S2-03G, SPB10N10LG, SPB11N60C3, SPB11N60S5, SPB12N50C3, 18N50, SPB17N80C3, SPB18P06PG, SPB20N60C3, SPB20N60S5, SPB21N50C3, SPB80N10LG, SPB80P06PG, SPD01N60C3

Keywords - SPB16N50C3 MOSFET specs

 SPB16N50C3 cross reference

 SPB16N50C3 equivalent finder

 SPB16N50C3 pdf lookup

 SPB16N50C3 substitution

 SPB16N50C3 replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.