SPB18P06PG Specs and Replacement

Type Designator: SPB18P06PG

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 81.1 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 18.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5.8 nS

Cossⓘ - Output Capacitance: 230 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm

Package: TO263

SPB18P06PG substitution

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SPB18P06PG datasheet

 ..1. Size:441K  infineon
 spb18p06pg.pdf pdf_icon

SPB18P06PG

SPB18P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.13 DS(on),max Enhancement mode I -18.6 A D Avalanche rated dv /dt rated PG-TO263-3 175 C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and reel infor... See More ⇒

 5.1. Size:295K  infineon
 spb18p06p.pdf pdf_icon

SPB18P06PG

SPB18P06P G SIPMOS Power-Transistor Product Summary Features V -60 V DS P-Channel R 0.13 DS(on),max Enhancement mode I -18.6 A D Avalanche rated dv /dt rated PG-TO263-3 175 C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Tape and reel information Marking Lead free Packing SPB... See More ⇒

Detailed specifications: SPB08P06PG, SPB100N03S2-03G, SPB10N10LG, SPB11N60C3, SPB11N60S5, SPB12N50C3, SPB16N50C3, SPB17N80C3, IRF520, SPB20N60C3, SPB20N60S5, SPB21N50C3, SPB80N10LG, SPB80P06PG, SPD01N60C3, SPD02N50C3, SPD02N60C3

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