All MOSFET. SPB18P06PG Datasheet

 

SPB18P06PG Datasheet and Replacement


   Type Designator: SPB18P06PG
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 81.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 18.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 5.8 nS
   Cossⓘ - Output Capacitance: 230 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
   Package: TO263
 

 SPB18P06PG substitution

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SPB18P06PG Datasheet (PDF)

 ..1. Size:441K  infineon
 spb18p06pg.pdf pdf_icon

SPB18P06PG

SPB18P06P GSIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.13DS(on),max Enhancement modeI -18.6 AD Avalanche rated dv /dt ratedPG-TO263-3 175C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and reel infor

 5.1. Size:295K  infineon
 spb18p06p.pdf pdf_icon

SPB18P06PG

SPB18P06P GSIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.13DS(on),max Enhancement modeI -18.6 AD Avalanche rated dv /dt ratedPG-TO263-3 175C operating temperature Pb-free lead plating; RoHS compliant Halogen-free according to IEC61249-2-21 Type Package Tape and reel information Marking Lead free PackingSPB

Datasheet: SPB08P06PG , SPB100N03S2-03G , SPB10N10LG , SPB11N60C3 , SPB11N60S5 , SPB12N50C3 , SPB16N50C3 , SPB17N80C3 , CS150N03A8 , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG , SPD01N60C3 , SPD02N50C3 , SPD02N60C3 .

History: 2SK2193 | DMP6110SSD | EM6K7 | APTC60DAM18CTG | ELM56801EA | KI2300 | HUFA75829D3S

Keywords - SPB18P06PG MOSFET datasheet

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