SPB20N60C3 Datasheet and Replacement
Type Designator: SPB20N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 20.7 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 780 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO263
SPB20N60C3 substitution
SPB20N60C3 Datasheet (PDF)
spb20n60c3.pdf

Isc N-Channel MOSFET Transistor SPB20N60C3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo
spb20n60s5.pdf

SPB20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 APG-TO263 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPB20N60S5 PG-TO263 Q67040-S4171 20N60S5Maximum RatingsPara
spb20n60s5.pdf

INCHANGE Semiconductorisc N-Channel MOSFET Transistor SPB20N60S5FEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM
Datasheet: SPB100N03S2-03G , SPB10N10LG , SPB11N60C3 , SPB11N60S5 , SPB12N50C3 , SPB16N50C3 , SPB17N80C3 , SPB18P06PG , IRFB31N20D , SPB20N60S5 , SPB21N50C3 , SPB80N10LG , SPB80P06PG , SPD01N60C3 , SPD02N50C3 , SPD02N60C3 , SPD02N60S5 .
History: SPW20N60C3 | TK20N60W5
Keywords - SPB20N60C3 MOSFET datasheet
SPB20N60C3 cross reference
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History: SPW20N60C3 | TK20N60W5



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