SPB80N10LG Specs and Replacement
Type Designator: SPB80N10LG
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Absolute Maximum Ratings
Pd ⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Id| ⓘ - Maximum Drain Current: 80
A
Tj ⓘ - Maximum Junction Temperature: 175
°C
Electrical Characteristics
tr ⓘ - Rise Time: 60
nS
Cossⓘ -
Output Capacitance: 640
pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024
Ohm
Package:
TO263
-
MOSFET ⓘ Cross-Reference Search
SPB80N10LG datasheet
..1. Size:892K infineon
spb80n10lg.pdf 
SPB80N10L SIPMOSTMPower-Transistor Product Summary Feature VDS S 2Hmfssjq R Jsmfshjrjsy rtij I Qtlnh Qj jq 627276 Marking Type Package XUG=5S 65Q Maximum Ratings1 fy Tj B 7 H1 zsqjxx tymjw nxj xujhnknji Parameter Symbol Value Unit ... See More ⇒
8.1. Size:208K 1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf 
SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒
8.2. Size:345K infineon
spp80n06s2-05 spb80n06s2-05.pdf 
www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.8 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-05 P- TO220 -3-1 Q67040-S4245 2N0605 SPB80N06S2-05 ... See More ⇒
8.3. Size:311K infineon
spp80n06s2l-09 spb80n06s2l-09.pdf 
SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8.5 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-09 P- TO220 -3-1 Q67060-S6031 2N06L09 SPB80N06S2L-09 P- TO263 -3-2 ... See More ⇒
8.4. Size:311K infineon
spp80n06s2l-h5 spb80n06s2l-h5.pdf 
SPP80N06S2L-H5 SPB80N06S2L-H5 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 5 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-H5 P- TO220 -3-1 Q67060-S6054 2N06LH5 SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5 Maximum Ratings, a... See More ⇒
8.5. Size:516K infineon
spb80n06s2-09 spp80n06s2-09.pdf 
SPP80N06S2-09 Preliminary data SPB80N06S2-09 OptiMOS =Power-Transistor = == Product Summary Feature VDS 55 V N-Channel RDS(on) 9.1 m Enhancement mode ID 80 A 175 C operating temperature P-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-09 P-TO220-3-1 Q67060-S6025 2N0609 SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609 Maxi... See More ⇒
8.6. Size:456K infineon
spi80n03s2-03 spp80n03s2-03 spb80n03s2-03.pdf 
www.DataSheet4U.com SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3.1 m Enhancement mode ID 80 A Excellent Gate Charge x RDS(on) product (FOM) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175 C operating temperature Avalanche rated ... See More ⇒
8.7. Size:308K infineon
spp80n06s2l-07 spb80n06s2l-07.pdf 
SPP80N06S2L-07 SPB80N06S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 7 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-07 P- TO220 -3-1 Q67040-S4285 2N06L07 SPB80N06S2L-07 P- TO263 -3-2 Q6... See More ⇒
8.8. Size:314K infineon
spp80n08s2l spb80n08s2l.pdf 
SPP80N08S2L-07 SPB80N08S2L-07 OptiMOS Power-Transistor Product Summary Feature VDS 75 V N-Channel RDS(on) max. SMD version 6.8 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N08S2L-07 P- TO220 -3-1 Q67060-S6015 2N08L07 SPB80N08S2L-... See More ⇒
8.9. Size:419K infineon
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf 
SPI80N06S2-08 SPP80N06S2-08,SPB80N06S2-08 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8 m Enhancement mode ID 80 A 175 C operating temperature P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-08 P- TO220 -3-1 Q67060-S4283 2N0608 SPB80N06S2-08 P- TO263 -... See More ⇒
8.10. Size:205K infineon
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf 
SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒
8.11. Size:416K infineon
spb80n03s2.pdf 
SPI80N03S2-03 SPP80N03S2-03,SPB80N03S2-03 OptiMOS Power-Transistor Product Summary Feature VDS 30 V N-Channel RDS(on) max. SMD version 3.1 m Enhancement mode ID 80 A Excellent Gate Charge x RDS(on) product (FOM) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Type Pa... See More ⇒
Detailed specifications: SPB11N60S5
, SPB12N50C3
, SPB16N50C3
, SPB17N80C3
, SPB18P06PG
, SPB20N60C3
, SPB20N60S5
, SPB21N50C3
, 2N60
, SPB80P06PG
, SPD01N60C3
, SPD02N50C3
, SPD02N60C3
, SPD02N60S5
, SPD02N80C3
, SPD03N50C3
, SPD03N60C3
.
History: PTF10149
| 2SK2641-01
| TSM9NB50CI
| AM90N03-08P
Keywords - SPB80N10LG MOSFET specs
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SPB80N10LG equivalent finder
SPB80N10LG pdf lookup
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