SPB80N10LG PDF and Equivalents Search

 

SPB80N10LG Specs and Replacement


   Type Designator: SPB80N10LG
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 60 nS
   Cossⓘ - Output Capacitance: 640 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.024 Ohm
   Package: TO263
 

 SPB80N10LG substitution

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SPB80N10LG datasheet

 ..1. Size:892K  infineon
spb80n10lg.pdf pdf_icon

SPB80N10LG

SPB80N10L SIPMOSTMPower-Transistor Product Summary Feature VDS S 2Hmfssjq R Jsmfshjrjsy rtij I Qtlnh Qj jq 627276 Marking Type Package XUG=5S 65Q Maximum Ratings1 fy Tj B 7 H1 zsqjxx tymjw nxj xujhnknji Parameter Symbol Value Unit ... See More ⇒

 8.1. Size:208K  1
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf pdf_icon

SPB80N10LG

SPB80N06S-08 SPI80N06S-08, SPP80N06S-08 SIPMOS Power-Transistor Product Summary Features V 55 V DS N-channel - Normal Level -Enhancement mode R (SMD version) 7.7 m DS(on),max Automotive AEC Q101 qualified I 80 A D MSL1 up to 260 C peak reflow 175 C operating temperature Green Package PG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive ... See More ⇒

 8.2. Size:345K  infineon
spp80n06s2-05 spb80n06s2-05.pdf pdf_icon

SPB80N10LG

www.DataSheet4U.com SPP80N06S2-05 SPB80N06S2-05 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) max. SMD version 4.8 m Enhancement mode ID 80 A 175 C operating temperature P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2-05 P- TO220 -3-1 Q67040-S4245 2N0605 SPB80N06S2-05 ... See More ⇒

 8.3. Size:311K  infineon
spp80n06s2l-09 spb80n06s2l-09.pdf pdf_icon

SPB80N10LG

SPP80N06S2L-09 SPB80N06S2L-09 OptiMOS Power-Transistor Product Summary Feature VDS 55 V N-Channel RDS(on) 8.5 m Enhancement mode ID 80 A Logic Level P- TO263 -3-2 P- TO220 -3-1 175 C operating temperature Avalanche rated dv/dt rated Type Package Ordering Code Marking SPP80N06S2L-09 P- TO220 -3-1 Q67060-S6031 2N06L09 SPB80N06S2L-09 P- TO263 -3-2 ... See More ⇒

Detailed specifications: SPB11N60S5 , SPB12N50C3 , SPB16N50C3 , SPB17N80C3 , SPB18P06PG , SPB20N60C3 , SPB20N60S5 , SPB21N50C3 , 2N60 , SPB80P06PG , SPD01N60C3 , SPD02N50C3 , SPD02N60C3 , SPD02N60S5 , SPD02N80C3 , SPD03N50C3 , SPD03N60C3 .

History: PTF10149 | 2SK2641-01 | TSM9NB50CI | AM90N03-08P

Keywords - SPB80N10LG MOSFET specs

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