SPB80N10LG MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SPB80N10LG
Маркировка: 80N10L
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 250 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 160 nC
Время нарастания (tr): 60 ns
Выходная емкость (Cd): 640 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.024 Ohm
Тип корпуса: TO263
Аналог (замена) для SPB80N10LG
SPB80N10LG Datasheet (PDF)
spb80n10lg.pdf
SPB80N10L SIPMOSTMPower-TransistorProduct SummaryFeatureVDS S 2HmfssjqR Jsmfshjrjsy rtijI Qtlnh Qj{jq 627276MarkingType PackageXUG=5S 65Q Maximum Ratings1 fy Tj B 7: H1 zsqjxx tymjw|nxj xujhnknjiParameter Symbol Value Unit
spi80n06s-08 spp80n06s-08 spb80n06s-08.pdf
SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive
spp80n06s2-05 spb80n06s2-05.pdf
www.DataSheet4U.com SPP80N06S2-05SPB80N06S2-05OptiMOS Power-TransistorProduct SummaryFeatureVDS 55 V N-ChannelRDS(on) max. SMD version 4.8 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-05 P- TO220 -3-1 Q67040-S42452N0605SPB80N06S2-05
spp80n06s2l-09 spb80n06s2l-09.pdf
SPP80N06S2L-09SPB80N06S2L-09OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8.5 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-09 P- TO220 -3-1 Q67060-S60312N06L09SPB80N06S2L-09 P- TO263 -3-2
spp80n06s2l-h5 spb80n06s2l-h5.pdf
SPP80N06S2L-H5SPB80N06S2L-H5OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 5 m Enhancement modeID 80 A 175C operating temperatureP- TO263 -3-2 P- TO220 -3-1 dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-H5 P- TO220 -3-1 Q67060-S60542N06LH5SPB80N06S2L-H5 P- TO263 -3-2 Q67060-S6055 2N06LH5Maximum Ratings, a
spb80n06s2-09 spp80n06s2-09.pdf
SPP80N06S2-09Preliminary dataSPB80N06S2-09OptiMOS =Power-Transistor===Product SummaryFeatureVDS55 V N-ChannelRDS(on) 9.1 m Enhancement modeID 80 A 175C operating temperatureP-TO263-3-2 P-TO220-3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-09 P-TO220-3-1 Q67060-S60252N0609SPB80N06S2-09 P-TO263-3-2 Q67060-S6027 2N0609Maxi
spi80n03s2-03 spp80n03s2-03 spb80n03s2-03.pdf
www.DataSheet4U.com SPI80N03S2-03SPP80N03S2-03,SPB80N03S2-03OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3.1 m Enhancement modeID 80 A Excellent Gate Charge x RDS(on) product (FOM)P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175C operating temperature Avalanche rated
spp80n06s2l-07 spb80n06s2l-07.pdf
SPP80N06S2L-07SPB80N06S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 7 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2L-07 P- TO220 -3-1 Q67040-S42852N06L07SPB80N06S2L-07 P- TO263 -3-2 Q6
spp80n08s2l spb80n08s2l.pdf
SPP80N08S2L-07SPB80N08S2L-07OptiMOS Power-TransistorProduct SummaryFeatureVDS75 V N-ChannelRDS(on) max. SMD version 6.8 m Enhancement modeID 80 A Logic LevelP- TO263 -3-2 P- TO220 -3-1 175C operating temperature Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N08S2L-07 P- TO220 -3-1 Q67060-S60152N08L07SPB80N08S2L-
spp80n06s2-08 spb80n06s2-08 spi80n06s2-08.pdf
SPI80N06S2-08SPP80N06S2-08,SPB80N06S2-08OptiMOS Power-TransistorProduct SummaryFeatureVDS55 V N-ChannelRDS(on) 8 m Enhancement modeID 80 A 175C operating temperatureP- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Avalanche rated dv/dt ratedType Package Ordering Code MarkingSPP80N06S2-08 P- TO220 -3-1 Q67060-S42832N0608SPB80N06S2-08 P- TO263 -
spb80n06s-08 spi80n06s-08 spp80n06s-08 spp80n06s spb80n06s spi80n06s-08green.pdf
SPB80N06S-08SPI80N06S-08, SPP80N06S-08SIPMOS Power-TransistorProduct SummaryFeaturesV 55 VDS N-channel - Normal Level -Enhancement modeR (SMD version) 7.7mDS(on),max Automotive AEC Q101 qualifiedI 80 AD MSL1 up to 260C peak reflow 175C operating temperature Green PackagePG-TO263-3-2 PG-TO262-3-1 PG-TO220-3-1 Avalanche test Repetive
spb80n03s2.pdf
SPI80N03S2-03SPP80N03S2-03,SPB80N03S2-03OptiMOS Power-TransistorProduct SummaryFeatureVDS30 V N-ChannelRDS(on) max. SMD version 3.1 m Enhancement modeID 80 A Excellent Gate Charge x RDS(on) product (FOM)P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1 Superior thermal resistance 175C operating temperature Avalanche rated dv/dt ratedType Pa
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History: 2SK1623S
