All MOSFET. SPD02N60S5 Datasheet

 

SPD02N60S5 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD02N60S5

Marking Code: 02N60S5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 25 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5.5 V

Maximum Drain Current |Id|: 1.8 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 9.5 nC

Rise Time (tr): 35 nS

Drain-Source Capacitance (Cd): 77 pF

Maximum Drain-Source On-State Resistance (Rds): 3 Ohm

Package: TO252

SPD02N60S5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD02N60S5 Datasheet (PDF)

0.1. spd02n60s5 spu02n60s5.pdf Size:882K _infineon

SPD02N60S5
SPD02N60S5

SPU02N60S5 SPD02N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 3 Ω • New revolutionary high voltage technology ID 1.8 A • Ultra low gate charge PG-TO252 PG-TO251 • Periodic avalanche rated • Extreme dv/dt rated 2 3 • Ultra low effective capacitances 3 1 2 1 • Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO2

6.1. spd02n60.pdf Size:82K _siemens

SPD02N60S5
SPD02N60S5

SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor • N-Channel • Enhancement mode • Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) @ VGS Package Ordering Code SPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 Ω SPU02N60 P-TO251 Q67040-S4127-A2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Value Unit Continuous d

6.2. spd02n60c3 spu02n60c3.pdf Size:1013K _infineon

SPD02N60S5
SPD02N60S5

 VDS Tjmax Ω • • G G • • • G G

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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