SPD02N60S5. Аналоги и основные параметры
Наименование производителя: SPD02N60S5
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 25 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 1.8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 77 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 3 Ohm
Тип корпуса: TO252
Аналог (замена) для SPD02N60S5
- подборⓘ MOSFET транзистора по параметрам
SPD02N60S5 даташит
spu02n60s5 spd02n60s5.pdf
SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO2
spd02n60s5 spu02n60s5.pdf
SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO2
spd02n60s5.pdf
isc N-Channel MOSFET Transistor SPD02N60S5,ISPD02N60S5 FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Ultra low effective capacitance Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE
spd02n60.pdf
SPD02N60 SPU02N60 Preliminary data SIPMOS Power Transistor N-Channel Enhancement mode Avalanche rated Pin 1 Pin 2 Pin 3 G D S Type VDS ID RDS(on) @ VGS Package Ordering Code SPD02N60 600 V 2 A VGS = 10 V P-TO252 Q67040-S4133 5.5 SPU02N60 P-TO251 Q67040-S4127-A2 Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Symbol Value Unit Continuous d
Другие IGBT... SPB20N60C3, SPB20N60S5, SPB21N50C3, SPB80N10LG, SPB80P06PG, SPD01N60C3, SPD02N50C3, SPD02N60C3, IRFB31N20D, SPD02N80C3, SPD03N50C3, SPD03N60C3, SPD03N60S5, SPD04N50C3, SPD04N60C3, SPD04N60S5, SPD04N80C3
History: 7N10 | 6N10 | DCC040M65G2
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