All MOSFET. SPD03N50C3 Datasheet

 

SPD03N50C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD03N50C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 500 V

Maximum Drain Current |Id|: 3.2 A

Maximum Drain-Source On-State Resistance (Rds): 1.4 Ohm

Package: DPAK, TO252

SPD03N50C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD03N50C3 Datasheet (PDF)

1.1. spd03n50c3.pdf Size:625K _infineon

SPD03N50C3
SPD03N50C3

 VDS Tjmax Ω • • G • • • • G

1.2. spd03n50c3.pdf Size:242K _inchange_semiconductor

SPD03N50C3
SPD03N50C3

isc N-Channel MOSFET Transistor SPD03N50C3, ISPD03N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 560

 4.1. spd03n60s5 spu03n60s5.pdf Size:892K _infineon

SPD03N50C3
SPD03N50C3

SPU03N60S5 SPD03N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 1.4 Ω • New revolutionary high voltage technology ID 3.2 A • Ultra low gate charge PG-TO252 PG-TO251 • Periodic avalanche rated • Extreme dv/dt rated 2 • Ultra low effective capacitances 3 3 1 2 1 • Improved transconductance Type Package Ordering Code Marking 03N60S5 SPU03N60S5 PG-T

4.2. spd03n60c3 spu03n60c3.pdf Size:982K _infineon

SPD03N50C3
SPD03N50C3

 VDS Tjmax Ω • • G G • • • • G

 4.3. spd03n60s5.pdf Size:244K _inchange_semiconductor

SPD03N50C3
SPD03N50C3

isc N-Channel MOSFET Transistor SPD03N60S5,ISPD03N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

4.4. spd03n60c3.pdf Size:243K _inchange_semiconductor

SPD03N50C3
SPD03N50C3

isc N-Channel MOSFET Transistor SPD03N60C3,ISPD03N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.4Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE U

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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