All MOSFET. SPD04N50C3 Datasheet

 

SPD04N50C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPD04N50C3
   Marking Code: 04N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 50 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 4.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 22 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 160 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.95 Ohm
   Package: TO252

 SPD04N50C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD04N50C3 Datasheet (PDF)

 ..1. Size:733K  infineon
 spd04n50c3.pdf

SPD04N50C3 SPD04N50C3

VDS Tjmax G ; available in Halogen free mold compounda) G

 ..2. Size:244K  inchange semiconductor
 spd04n50c3.pdf

SPD04N50C3 SPD04N50C3

isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 560

 8.1. Size:268K  1
 spd04n60s5 spu04n60s5.pdf

SPD04N50C3 SPD04N50C3

SPU04N60S5SPD04N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.95 New revolutionary high voltage technologyID 4.5 A Ultra low gate chargeP-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated23 Ultra low effective capacitances3121 Improved transconductanceType Package Ordering Code Marking04N60S5SPU04N60S5 P-T

 8.2. Size:389K  infineon
 spd04n80c3.pdf

SPD04N50C3 SPD04N50C3

SPD04N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 1.3WDS(on)max Extreme dv/dt ratedQ 23 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant; available in Halogen free mold compounda)PG-TO252-3

 8.3. Size:744K  infineon
 spd04n60c3 spu04n60c3.pdf

SPD04N50C3 SPD04N50C3

VDS Tjmax G G G G

 8.4. Size:244K  inchange semiconductor
 spd04n60s5.pdf

SPD04N50C3 SPD04N50C3

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 8.5. Size:245K  inchange semiconductor
 spd04n80c3.pdf

SPD04N50C3 SPD04N50C3

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3FEATURESStatic drain-source on-resistance:RDS(on)1.3Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 8

 8.6. Size:245K  inchange semiconductor
 spd04n60c3.pdf

SPD04N50C3 SPD04N50C3

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.95Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFX55N50F

 

 
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