SPD04P10PLG Datasheet and Replacement
Type Designator: SPD04P10PLG
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 38 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 5.7 nS
Cossⓘ - Output Capacitance: 70 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.05 Ohm
Package: TO252
SPD04P10PLG substitution
SPD04P10PLG Datasheet (PDF)
spd04p10plg.pdf

SPD04P10PL GSIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 850mDS(on),max Enhancement modeI -4.2 AD Logic level Avalanche ratedPG-TO-252-3 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Marking Lead free Packing Tape and reel informationSPD04P10PL G PG-TO252-3 04P10PL Yes Non dry
spd04p10pl.pdf

# # #;B1= '=-:>5>?;=#=;0@/? &@99-=DFeatures 100 VDSDSQ * 92??6= 850 m DS(on) maxQ ?92?46>6?D >@56 4.2 ADQ &@8:4 =6F6=Q F2=2?496 B2D65PGTO252-3-3Q *3 7B66 =625 A=2D:?8 + @", 4@>A=:2?DType Package Marking 1-0 2=11 Packing Tape and reel information,* * *& ! PGTO252 04P10PL Yes ( @? 5BI 1000 pcs / reel!-C59@9 =-?5:3> 2D T E?=6CC @D96
spd04p10pg.pdf

SPD04P10P GSIPMOS Power-TransistorProduct SummaryFeaturesV -100 VDS P-ChannelR 1DS(on),max Enhancement modeI -4 AD Normal level Avalanche ratedPG-TO252-3 Pb-free lead plating; RoHS compliant Qualified according to AEC Q101 Type Package Marking Lead free Packing Tape and reel informationSPD04P10P G PG-TO252-3 04P10P Yes Non dry 1000 pcs
spd04p10p.pdf

# # # # #;B1= '=-:>5>?;=#=;0@/? &@99-=DFeatures 100 VDSDSP ) 81>>581>35=5>C =?45 4 A4DP '?A=1
Datasheet: SPD03N50C3 , SPD03N60C3 , SPD03N60S5 , SPD04N50C3 , SPD04N60C3 , SPD04N60S5 , SPD04N80C3 , SPD04P10PG , HY1906P , SPD06N60C3 , SPD06N80C3 , SPD07N20G , SPD07N60C3 , SPD07N60S5 , SPD08N50C3 , SPD08P06PG , SPD09P06PLG .
Keywords - SPD04P10PLG MOSFET datasheet
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