All MOSFET. SPD04P10PLG Datasheet

 

SPD04P10PLG MOSFET. Datasheet pdf. Equivalent

Type Designator: SPD04P10PLG

Marking Code: 04P10PL

Type of Transistor: MOSFET

Type of Control Channel: P -Channel

Maximum Power Dissipation (Pd): 38 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2 V

Maximum Drain Current |Id|: 4.2 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 12 nC

Rise Time (tr): 5.7 nS

Drain-Source Capacitance (Cd): 70 pF

Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm

Package: TO252

SPD04P10PLG Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPD04P10PLG Datasheet (PDF)

4.1. spd04p10pl.pdf Size:685K _infineon

SPD04P10PLG
SPD04P10PLG

&# # # ® #;B1= '=-:>5>?;= #=;0@/? &@99-=D Features ‐100 V DS DS Q * 92??6= 850 m DS(on) max Q ?92?46>6?D >@56 ‐4.2 A D Q &@8:4 =6F6= Q F2=2?496 B2D65 PG‐TO‐252-3 -3 Q *3 7B66 =625 A=2D:?8 + @", 4@>A=:2?D Type Package Marking 1-0 2=11 Packing Tape and reel information ,* * *& ! PG‐TO252‐ 04P10PL Yes ( @? 5BI 1000 pcs / reel !-C59@9 =-?5:3> 2D T E?=6CC @D96

5.1. spd04p10p.pdf Size:679K _infineon

SPD04P10PLG
SPD04P10PLG

&# # # &# # # ® #;B1= '=-:>5>?;= #=;0@/? &@99-=D Features ‐100 V DS DS P ) 81>>5< 1 DS(on) max P >81>35=5>C =?45 ‐4 A ‐4 D P '?A=1< <5E5< P E1<1>385 A1C54 PG‐TO252‐ P )2 6A55 <514 @<1C9>7 * ?"+ 3?=@<91>C Type Package Marking 1-0 2=11 Packing Tape and reel information +) ) ) ! PG‐TO252‐ 04P10P Yes '?> 4AH 1000 pcs / reel !-C59@9 =-?5:3> 1C S D><5BB ?C8

 9.1. spd04n60s5 spu04n60s5.pdf Size:268K _1

SPD04P10PLG
SPD04P10PLG

SPU04N60S5 SPD04N60S5 Cool MOS™ Power Transistor VDS 600 V Feature RDS(on) 0.95 Ω • New revolutionary high voltage technology ID 4.5 A • Ultra low gate charge P-TO252. P-TO251. • Periodic avalanche rated • Extreme dv/dt rated 2 3 • Ultra low effective capacitances 3 1 2 1 • Improved transconductance Type Package Ordering Code Marking 04N60S5 SPU04N60S5 P-T

9.2. spd04n50c3.pdf Size:769K _infineon

SPD04P10PLG
SPD04P10PLG

 VDS Tjmax Ω • • G • • • • G

 9.3. spd04n60c3 spu04n60c3.pdf Size:744K _infineon

SPD04P10PLG
SPD04P10PLG

 VDS Tjmax Ω • • G G • • • • G G

9.4. spd04n80c3.pdf Size:491K _infineon

SPD04P10PLG
SPD04P10PLG

SPD04N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS • New revolutionary high voltage technology R @ Tj = 25°C 1.3 Ω DS(on)max • Extreme dv/dt rated Q 23 nC g,typ • High peak current capability • Qualified according to JEDEC1) for target applications • Pb-free lead plating; RoHS compliant PG-TO252-3 • Ultra low gate charge • Ultra low effe

 9.5. spd04n50c3.pdf Size:244K _inchange_semiconductor

SPD04P10PLG
SPD04P10PLG

isc N-Channel MOSFET Transistor SPD04N50C3,ISPD04N50C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 560

9.6. spd04n60s5.pdf Size:244K _inchange_semiconductor

SPD04P10PLG
SPD04P10PLG

isc N-Channel MOSFET Transistor SPD04N60S5,ISPD04N60S5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600

9.7. spd04n80c3.pdf Size:245K _inchange_semiconductor

SPD04P10PLG
SPD04P10PLG

isc N-Channel MOSFET Transistor SPD04N80C3,ISPD04N80C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.3Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 8

9.8. spd04n60c3.pdf Size:245K _inchange_semiconductor

SPD04P10PLG
SPD04P10PLG

isc N-Channel MOSFET Transistor SPD04N60C3,ISPD04N60C3 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤0.95Ω ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High peak current capability ·Improved transconductance ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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