SPD07N60C3 Datasheet. Specs and Replacement
Type Designator: SPD07N60C3 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 83 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 7.3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3.5 nS
Cossⓘ - Output Capacitance: 260 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.6 Ohm
Package: TO252
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SPD07N60C3 substitution
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SPD07N60C3 datasheet
spd07n60c3.pdf
isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE U... See More ⇒
spd07n60s5 spu07n60s5.pdf
SPU07N60S5 SPD07N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252 PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated 2 3 Extreme dv/dt rated 3 1 2 1 Ultra low effective capacitances Improved transconductance Type Packag... See More ⇒
spd07n60s5.pdf
isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5 FEATURES Static drain-source on-resistance RDS(on) 0.6 Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Improved transconductance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 600 ... See More ⇒
Detailed specifications: SPD04N60C3, SPD04N60S5, SPD04N80C3, SPD04P10PG, SPD04P10PLG, SPD06N60C3, SPD06N80C3, SPD07N20G, MMIS60R580P, SPD07N60S5, SPD08N50C3, SPD08P06PG, SPD09P06PLG, SPD15P10PG, SPD15P10PLG, SPD18P06PG, SPD30N03S2L-07G
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