Справочник MOSFET. SPD07N60C3

 

SPD07N60C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPD07N60C3
   Маркировка: 07N60C3
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 83 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 3.9 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7.3 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 21 nC
   trⓘ - Время нарастания: 3.5 ns
   Cossⓘ - Выходная емкость: 260 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.6 Ohm
   Тип корпуса: TO252

 Аналог (замена) для SPD07N60C3

 

 

SPD07N60C3 Datasheet (PDF)

 ..1. Size:975K  infineon
 spd07n60c3 spu07n60c3.pdf

SPD07N60C3 SPD07N60C3

VDS Tjmax G G

 ..2. Size:245K  inchange semiconductor
 spd07n60c3.pdf

SPD07N60C3 SPD07N60C3

isc N-Channel MOSFET Transistor SPD07N60C3,ISPD07N60C3FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONHigh peak current capabilityImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE U

 6.1. Size:888K  infineon
 spd07n60s5 spu07n60s5.pdf

SPD07N60C3 SPD07N60C3

SPU07N60S5SPD07N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.3 A Worldwide best RDS(on) in TO-251 and TO-252PG-TO252 PG-TO251 Ultra low gate charge Periodic avalanche rated23 Extreme dv/dt rated3121 Ultra low effective capacitances Improved transconductanceType Packag

 6.2. Size:244K  inchange semiconductor
 spd07n60s5.pdf

SPD07N60C3 SPD07N60C3

isc N-Channel MOSFET Transistor SPD07N60S5,ISPD07N60S5FEATURESStatic drain-source on-resistance:RDS(on)0.6Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONImproved transconductanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 600

 8.1. Size:136K  infineon
 spd07n20.pdf

SPD07N60C3 SPD07N60C3

SPD 07N20Preliminary DataSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VVDS N channelDrain-Source on-state resistance 0.4RDS(on) Enhancement modeContinuous drain current 7 AID Avalanche rated dv/dt ratedPin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD07N20 P-TO252 Q67040-S4120 Tape and ReelSPU07N20 P-

 8.2. Size:1067K  infineon
 spd07n20 .pdf

SPD07N60C3 SPD07N60C3

SPD 07N20 GSIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 200 VDS N channelDrain-Source on-state resistance 0.4WDS(on) Enhancement modeContinuous drain current 7 AD Avalanche rated d /d ratedPin 1 Pin 2 Pin 3Type Package Pb-free PackagingG D SSPD07N20 G PG-TO252 Yes Tape and ReelSPU07N20 G PG-TO251 Yes TubeMaximum Ratings, at

 8.3. Size:244K  inchange semiconductor
 spd07n20g.pdf

SPD07N60C3 SPD07N60C3

isc N-Channel MOSFET Transistor SPD07N20G,ISPD07N20GFEATURESStatic drain-source on-resistance:RDS(on)0.4Enhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONIdeal for high-frequency switching and synchronous rectificationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VA

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