SPD30P06PG Specs and Replacement

Type Designator: SPD30P06PG

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 11 nS

Cossⓘ - Output Capacitance: 387 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm

Package: TO252

SPD30P06PG substitution

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SPD30P06PG datasheet

 ..1. Size:500K  infineon
spd30p06p spd30p06pg.pdf pdf_icon

SPD30P06PG

SPD30P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.075 Avalanche rated Continuous drain current ID -30 A dv/dt rated 175 C operating temperature Pb-free lead plating; RoHS compliat Qualified according to AEC Q101 Pin 1 PIN 2/4 PIN 3 G D S Type Package S... See More ⇒

 ..2. Size:845K  cn vbsemi
spd30p06pg.pdf pdf_icon

SPD30P06PG

SPD30P06PG www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge C... See More ⇒

 9.1. Size:631K  infineon
spd30n03s2l-10 .pdf pdf_icon

SPD30P06PG

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian... See More ⇒

 9.2. Size:114K  infineon
spd30n03.pdf pdf_icon

SPD30P06PG

SPD 30N03 SIPMOS Power Transistor Product Summary Features Drain source voltage 30 V VDS N channel Drain-Source on-state resistance 0.015 RDS(on) Enhancement mode Continuous drain current 30 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD30N03 P-TO252 Q67040-S4144-A2 Tape ... See More ⇒

Detailed specifications: SPD08P06PG, SPD09P06PLG, SPD15P10PG, SPD15P10PLG, SPD18P06PG, SPD30N03S2L-07G, SPD30N03S2L-10G, SPD30N03S2L-20G, 20N60, SPD50N03S2-07G, SPD50N03S2L-06G, SPD50P03LG, SPI80N06S-08, SPI07N60C3, SPI07N60S5, SPI07N65C3, SPI08N50C3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.