SPD30P06P G SIPMOS Power-TransistorFeaturesProduct Summary P-ChannelDrain source voltage VDS -60 V Enhancement modeDrain-source on-state resistance RDS(on) 0.075 Avalanche ratedContinuous drain current ID -30 A dv/dt rated 175C operating temperature Pb-free lead plating; RoHS compliat Qualified according to AEC Q101Pin 1 PIN 2/4 PIN 3G D SType PackageS

SPD30P06PGwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)d Qg (Typ)Definition0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET- 60 260.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/ECAPPLICATIONS High Side Switch for Full Bridge C

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

SPD 30N03SIPMOS Power TransistorProduct SummaryFeaturesDrain source voltage 30 VVDS N channelDrain-Source on-state resistance 0.015RDS(on) Enhancement modeContinuous drain current 30 AID Avalanche rated dv/dt rated 175C operating temperaturePin 1 Pin 2 Pin 3Type Package Ordering Code PackagingG D SSPD30N03 P-TO252 Q67040-S4144-A2 Tape

GSPD30N03S2L-20 OptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement modeRDS(on) 20 m Logic LevelID 30 APG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliantMarkingType Package

SPD30N03S2L-10 GOptiMOS Power-TransistorFeature Product Summary N-Channel VDS30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 APG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

SPD30N03S2L-07 GOptiMOS Power-TransistorProduct SummaryFeatureVDS N-Channel30 V Enhancement modeRDS(on) 6.7 m Logic LevelID 30 APG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175C operating temperature Avalanche rated dv/dt rated. Pb-free lead plating; RoHS compliantType Package Marking

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2LFEATURESStatic drain-source on-resistance:RDS(on)10mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONSuperior thermal resistanceABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage