SPD30P06PG - описание и поиск аналогов

 ..1. Size:500K  infineon
 spd30p06p spd30p06pg.pdf 

SPD30P06P G SIPMOS Power-Transistor Features Product Summary P-Channel Drain source voltage VDS -60 V Enhancement mode Drain-source on-state resistance RDS(on) 0.075 Avalanche rated Continuous drain current ID -30 A dv/dt rated 175 C operating temperature Pb-free lead plating; RoHS compliat Qualified according to AEC Q101 Pin 1 PIN 2/4 PIN 3 G D S Type Package S

 ..2. Size:845K  cn vbsemi
 spd30p06pg.pdf 

SPD30P06PG www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ) Definition 0.053 at VGS = - 10 V - 25 TrenchFET Power MOSFET - 60 26 0.062 at VGS = - 4.5 V - 20 100 % UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS High Side Switch for Full Bridge C

 9.1. Size:631K  infineon
 spd30n03s2l-10 .pdf 

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

 9.2. Size:114K  infineon
 spd30n03.pdf 

SPD 30N03 SIPMOS Power Transistor Product Summary Features Drain source voltage 30 V VDS N channel Drain-Source on-state resistance 0.015 RDS(on) Enhancement mode Continuous drain current 30 A ID Avalanche rated dv/dt rated 175 C operating temperature Pin 1 Pin 2 Pin 3 Type Package Ordering Code Packaging G D S SPD30N03 P-TO252 Q67040-S4144-A2 Tape

 9.3. Size:682K  infineon
 spd30n03s2l-20.pdf 

G SPD30N03S2L-20 OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 20 m Logic Level ID 30 A PG- TO252 -3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS compliant Marking Type Package

 9.4. Size:586K  infineon
 spd30n03s2l-10.pdf 

SPD30N03S2L-10 G OptiMOS Power-Transistor Feature Product Summary N-Channel VDS 30 V Enhancement mode RDS(on) 10 m Logic Level ID 30 A PG-TO252-3 Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated Pb-free lead plating; RoHS complian

 9.5. Size:651K  infineon
 spd30n03s2l-07.pdf 

SPD30N03S2L-07 G OptiMOS Power-Transistor Product Summary Feature VDS N-Channel 30 V Enhancement mode RDS(on) 6.7 m Logic Level ID 30 A PG-TO252-3 Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175 C operating temperature Avalanche rated dv/dt rated . Pb-free lead plating; RoHS compliant Type Package Marking

 9.6. Size:243K  inchange semiconductor
 spd30n03s2l.pdf 

isc N-Channel MOSFET Transistor SPD30N03S2L,ISPD30N03S2L FEATURES Static drain-source on-resistance RDS(on) 10m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Superior thermal resistance ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage