BF510 MOSFET. Datasheet pdf. Equivalent
Type Designator: BF510
Marking Code: S6_S6p
Type of Transistor: FET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id|ⓘ - Maximum Drain Current: 0.003 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Cossⓘ - Output Capacitance: 0.4 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5000 Ohm
Package: SOT23
BF510 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF510 Datasheet (PDF)
bf510 bf511 bf512 bf513 cnv 2.pdf
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DISCRETE SEMICONDUCTORSDATA SHEETBF510 to 513N-channel silicon field-effecttransistorsDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planarBF510 = S6pepitaxial junction field-effectBF511 = S7pt
bf510 bf511 bf512 bf513.pdf
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DISCRETE SEMICONDUCTORS DATA SHEETBF510 to 513N-channel silicon field-effect transistorsProduct specification December 1997NXP Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planar BF510 = S6pepitaxial junction field-effect BF511 = S7ptransistors in the miniature plastic BF51
mmbf5103.pdf
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MMBF5103N-Channel SwitchG This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics.SSOT-23DMark: 66A1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 40 VVGS Ga
Datasheet: BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C , BF410D , IRF9540 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , BF556A , BF556B .
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