BF510 Specs and Replacement
Type Designator: BF510
Type of Transistor: FET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 0.003 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 0.4 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 5000 Ohm
Package: SOT23
BF510 substitution
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BF510 datasheet
bf510 bf511 bf512 bf513 cnv 2.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors December 1997 Product specification File under Discrete Semiconductors, SC07 Philips Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p t... See More ⇒
bf510 bf511 bf512 bf513.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BF510 to 513 N-channel silicon field-effect transistors Product specification December 1997 NXP Semiconductors Product specification N-channel silicon field-effect transistors BF510 to 513 DESCRIPTION MARKING CODE Asymmetrical N-channel planar BF510 = S6p epitaxial junction field-effect BF511 = S7p transistors in the miniature plastic BF51... See More ⇒
mmbf5103.pdf
MMBF5103 N-Channel Switch G This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics. S SOT-23 D Mark 66A 1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25 C unless otherwise noted Symbol Parameter Value Units VDG Drain-Gate Voltage 40 V VGS Ga... See More ⇒
Detailed specifications: BF350, BF351, BF352, BF353, BF410A, BF410B, BF410C, BF410D, SKD502T, BF511, BF512, BF513, BF545A, BF545B, BF545C, BF556A, BF556B
Keywords - BF510 MOSFET specs
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