BF510
MOSFET. Datasheet pdf. Equivalent
Type Designator: BF510
Marking Code: S6_S6p
Type of Transistor: FET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 0.25
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20
V
|Id|ⓘ - Maximum Drain Current: 0.003
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Cossⓘ -
Output Capacitance: 0.4
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 5000
Ohm
Package:
SOT23
BF510
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
BF510
Datasheet (PDF)
..1. Size:34K philips
bf510 bf511 bf512 bf513 cnv 2.pdf
DISCRETE SEMICONDUCTORSDATA SHEETBF510 to 513N-channel silicon field-effecttransistorsDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planarBF510 = S6pepitaxial junction field-effectBF511 = S7pt
..2. Size:234K philips
bf510 bf511 bf512 bf513.pdf
DISCRETE SEMICONDUCTORS DATA SHEETBF510 to 513N-channel silicon field-effect transistorsProduct specification December 1997NXP Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planar BF510 = S6pepitaxial junction field-effect BF511 = S7ptransistors in the miniature plastic BF51
0.1. Size:79K fairchild semi
mmbf5103.pdf
MMBF5103N-Channel SwitchG This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics.SSOT-23DMark: 66A1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 40 VVGS Ga
Datasheet: BF350
, BF351
, BF352
, BF353
, BF410A
, BF410B
, BF410C
, BF410D
, AON7506
, BF511
, BF512
, BF513
, BF545A
, BF545B
, BF545C
, BF556A
, BF556B
.