All MOSFET. BF510 Datasheet

 

BF510 MOSFET. Datasheet pdf. Equivalent

Type Designator: BF510

Marking Code: S6_S6p

Type of Transistor: FET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 0.25 W

Maximum Drain-Source Voltage |Vds|: 20 V

Maximum Drain Current |Id|: 0.003 A

Maximum Junction Temperature (Tj): 150 °C

Drain-Source Capacitance (Cd): 0.4 pF

Maximum Drain-Source On-State Resistance (Rds): 5000 Ohm

Package: SOT23

BF510 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF510 Datasheet (PDF)

 ..1. Size:234K  philips
 bf510 bf511 bf512 bf513.pdf

BF510 BF510

DISCRETE SEMICONDUCTORS DATA SHEETBF510 to 513N-channel silicon field-effect transistorsProduct specification December 1997NXP Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planar BF510 = S6pepitaxial junction field-effect BF511 = S7ptransistors in the miniature plastic BF51

 ..2. Size:34K  philips
 bf510 bf511 bf512 bf513 cnv 2.pdf

BF510 BF510

DISCRETE SEMICONDUCTORSDATA SHEETBF510 to 513N-channel silicon field-effecttransistorsDecember 1997Product specificationFile under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon field-effect transistors BF510 to 513DESCRIPTION MARKING CODEAsymmetrical N-channel planarBF510 = S6pepitaxial junction field-effectBF511 = S7pt

 0.1. Size:79K  fairchild semi
 mmbf5103.pdf

BF510 BF510

MMBF5103N-Channel SwitchG This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. See J111 for characteristics.SSOT-23DMark: 66A1. Drain 2. Source 3. Gate Absolute Maximum Ratings* Ta=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 40 VVGS Ga

Datasheet: BF350 , BF351 , BF352 , BF353 , BF410A , BF410B , BF410C , BF410D , K4145 , BF511 , BF512 , BF513 , BF545A , BF545B , BF545C , BF556A , BF556B .

 

 
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