All MOSFET. SPI08N80C3 Datasheet

 

SPI08N80C3 Datasheet and Replacement


   Type Designator: SPI08N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 104 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 46 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm
   Package: TO262
 

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SPI08N80C3 Datasheet (PDF)

 ..1. Size:463K  infineon
 spi08n80c3.pdf pdf_icon

SPI08N80C3

SPI08N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.65DS(on)max Extreme dv/dt ratedQ 45 nCg,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliantPG-TO262-3 Ultra low gate charge Ultra low eff

 8.1. Size:726K  infineon
 spp08n50c3 spi08n50c3 spp08n50c3 spi08n50c3 spa08n50c3 rev.2.91.pdf pdf_icon

SPI08N80C3

SPP08N50C3, SPI08N50C3SPA08N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.6 New revolutionary high voltage technologyID 7.6 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 Ultra low effective capacitances21P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111

Datasheet: SPD50N03S2-07G , SPD50N03S2L-06G , SPD50P03LG , SPI80N06S-08 , SPI07N60C3 , SPI07N60S5 , SPI07N65C3 , SPI08N50C3 , IRF640N , SPI11N60C3 , SPI11N60CFD , SPI11N60S5 , SPI11N65C3 , SPI12N50C3 , SPI15N60C3 , SPI15N60CFD , SPI15N65C3 .

History: CEB6086 | AP60WN2K3H | CSD25302Q2

Keywords - SPI08N80C3 MOSFET datasheet

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