SPI08N80C3 Specs and Replacement

Type Designator: SPI08N80C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 104 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 46 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.65 Ohm

Package: TO262

SPI08N80C3 substitution

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SPI08N80C3 datasheet

 ..1. Size:463K  infineon
 spi08n80c3.pdf pdf_icon

SPI08N80C3

SPI08N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.65 DS(on)max Extreme dv/dt rated Q 45 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant PG-TO262-3 Ultra low gate charge Ultra low eff... See More ⇒

 8.1. Size:726K  infineon
 spp08n50c3 spi08n50c3 spp08n50c3 spi08n50c3 spa08n50c3 rev.2.91.pdf pdf_icon

SPI08N80C3

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS Power Transistor VDS @ Tjmax 560 V Feature RDS(on) 0.6 New revolutionary high voltage technology ID 7.6 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 Ultra low effective capacitances 2 1 P-TO220-3-31 Improved transconductance PG-TO-220-3-31;-3-111... See More ⇒

Detailed specifications: SPD50N03S2-07G, SPD50N03S2L-06G, SPD50P03LG, SPI80N06S-08, SPI07N60C3, SPI07N60S5, SPI07N65C3, SPI08N50C3, IRFB4110, SPI11N60C3, SPI11N60CFD, SPI11N60S5, SPI11N65C3, SPI12N50C3, SPI15N60C3, SPI15N60CFD, SPI15N65C3

Keywords - SPI08N80C3 MOSFET specs

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