All MOSFET. SPI11N60C3 Datasheet

 

SPI11N60C3 Datasheet and Replacement


   Type Designator: SPI11N60C3
   Marking Code: 11N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 45 nC
   trⓘ - Rise Time: 5 nS
   Cossⓘ - Output Capacitance: 390 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO262
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SPI11N60C3 Datasheet (PDF)

 ..1. Size:678K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf pdf_icon

SPI11N60C3

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

 ..2. Size:654K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf pdf_icon

SPI11N60C3

SPP11N60C3SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated3 High peak current capability21P-TO220-3-31 Improved transconductance PG-TO-2

 5.1. Size:937K  infineon
 spi11n60cfd.pdf pdf_icon

SPI11N60C3

SPI11N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.44 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge0)Qualified for industrial grade applications

 6.1. Size:472K  infineon
 spp11n60s5 spi11n60s5 spp11n60s5 spi11n60s5 .pdf pdf_icon

SPI11N60C3

SPP11N60S5SPI11N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.38 New revolutionary high voltage technologyID 11 A Ultra low gate chargePG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking11N60S5SPP11N60

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Keywords - SPI11N60C3 MOSFET datasheet

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