SPI11N60C3 - аналоги, параметры транзистора - Справочник транзисторов

SPI11N60C3 даташит

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spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf pdf_icon

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2

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spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf pdf_icon

5.1. Size:937K infineon
spi11n60cfd.pdf pdf_icon

SPI11N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade applications

6.1. Size:472K infineon
spp11n60s5 spi11n60s5 spp11n60s5 spi11n60s5 .pdf pdf_icon

SPP11N60S5 SPI11N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 11N60S5 SPP11N60