SPI11N65C3 Specs and Replacement

Type Designator: SPI11N65C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 11 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 390 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm

Package: TO262

SPI11N65C3 substitution

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SPI11N65C3 datasheet

 ..1. Size:569K  infineon
 spp11n65c3 spa11n65c3 spi11n65c3 spp11n65c3 spa11n65c3 spi11n65c3 rev.2.91.pdf pdf_icon

SPI11N65C3

SPP11N65C3,SPA11N65C3 SPI11N65C3 Cool MOS Power Transistor V 650 V DS Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 PG-TO220FP PG-TO220 Periodic avalanche rated Extreme dv/dt rated High peak current capability Improved transconductance Type Package Ordering Code Marking SPP11N65C3 PG-TO220 Q67... See More ⇒

 7.1. Size:678K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 spa11n60c3e8185.pdf pdf_icon

SPI11N65C3

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2... See More ⇒

 7.2. Size:937K  infineon
 spi11n60cfd.pdf pdf_icon

SPI11N65C3

SPI11N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.44 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO262 Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge 0) Qualified for industrial grade applications... See More ⇒

 7.3. Size:654K  infineon
 spp11n60c3 spi11n60c3 spa11n60c3 e8185 rev.3.2.pdf pdf_icon

SPI11N65C3

SPP11N60C3 SPI11N60C3, SPA11N60C3, SPA11N60C3 E8185 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.38 New revolutionary high voltage technology ID 11 A Ultra low gate charge PG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated Extreme dv/dt rated 3 High peak current capability 2 1 P-TO220-3-31 Improved transconductance PG-TO-2... See More ⇒

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Detailed specifications: SPI07N60C3, SPI07N60S5, SPI07N65C3, SPI08N50C3, SPI08N80C3, SPI11N60C3, SPI11N60CFD, SPI11N60S5, IRFB4227, SPI12N50C3, SPI15N60C3, SPI15N60CFD, SPI15N65C3, SPI16N50C3, SPI20N60C3, SPI20N60CFD, SPI20N65C3

Keywords - SPI11N65C3 MOSFET specs

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs