SPI20N60C3 MOSFET. Datasheet pdf. Equivalent
Type Designator: SPI20N60C3
Marking Code: 20N60C3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 208 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
|Id|ⓘ - Maximum Drain Current: 20.7 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 87 nC
trⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 780 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm
Package: TO262
SPI20N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPI20N60C3 Datasheet (PDF)
spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf
SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco
spi20n60c3.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SPI20N60C3FEATURESWith TO-262(I2PAK) packageLow input capacitance and gate chargeHigh peak current capabilityImproved transconductance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =2
spi20n60cfd.pdf
SPI20N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.22 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO262 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeQualifi
spp20n65c3 spa20n65c3 spi20n65c3.pdf
SPP20N65C3, SPA20N65C3SPI20N65C3Cool MOS Power TransistorV 650 VDSFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO262 PG-TO220FP PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transconducta
Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , STP80NF70 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: NCEP040N10GU
History: NCEP040N10GU
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MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918