All MOSFET. SPP02N60C3 Datasheet

 

SPP02N60C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPP02N60C3
   Marking Code: 02N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id|ⓘ - Maximum Drain Current: 1.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 3 nS
   Cossⓘ - Output Capacitance: 90 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
   Package: TO220

 SPP02N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPP02N60C3 Datasheet (PDF)

 ..1. Size:456K  infineon
 spp02n60c3.pdf

SPP02N60C3 SPP02N60C3

P VDS Tjmax G G

 ..2. Size:247K  inchange semiconductor
 spp02n60c3.pdf

SPP02N60C3 SPP02N60C3

isc N-Channel MOSFET Transistor SPP02N60C3ISPP02N60C3FEATURESStatic drain-source on-resistance:RDS(on) 3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)a

 6.1. Size:935K  infineon
 spp02n60s5.pdf

SPP02N60C3 SPP02N60C3

SPP02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking02N60S5SPP02N60S5 PG-TO220 Q67040-S418

 6.2. Size:246K  inchange semiconductor
 spp02n60s5.pdf

SPP02N60C3 SPP02N60C3

isc N-Channel MOSFET Transistor SPP02N60S5ISPP02N60S5FEATURESStatic drain-source on-resistance:RDS(on) 3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUTE M

 8.1. Size:444K  infineon
 spp02n80c3.pdf

SPP02N60C3 SPP02N60C3

SPP02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7DS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

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History: TPC8211

 

 
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