SPP02N60C3 - Даташиты. Аналоги. Основные параметры

P VDS Tjmax G G

isc N-Channel MOSFET Transistor SPP02N60C3ISPP02N60C3FEATURESStatic drain-source on-resistance:RDS(on) 3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)a

SPP02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking02N60S5SPP02N60S5 PG-TO220 Q67040-S418

isc N-Channel MOSFET Transistor SPP02N60S5ISPP02N60S5FEATURESStatic drain-source on-resistance:RDS(on) 3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUTE M

SPP02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7DS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe