SPP02N80C3 Specs and Replacement
Type Designator: SPP02N80C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 42 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 13 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 2.7 Ohm
Package: TO220
SPP02N80C3 substitution
- MOSFET ⓘ Cross-Reference Search
SPP02N80C3 datasheet
spp02n80c3.pdf
SPP02N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 2.7 DS(on)max Extreme dv/dt rated Q 12 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe... See More ⇒
spp02n60s5.pdf
SPP02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO220 Periodic avalanche rated 2 Extreme dv/dt rated Ultra low effective capacitances 3 2 1 Improved transconductance P-TO220-3-1 Type Package Ordering Code Marking 02N60S5 SPP02N60S5 PG-TO220 Q67040-S418... See More ⇒
spp02n60c3.pdf
isc N-Channel MOSFET Transistor SPP02N60C3 ISPP02N60C3 FEATURES Static drain-source on-resistance RDS(on) 3 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge Ultra low effective capacitance ABSOLUTE MAXIMUM RATINGS(T =25 ) a ... See More ⇒
Detailed specifications: SPI15N65C3, SPI16N50C3, SPI20N60C3, SPI20N60CFD, SPI20N65C3, SPI21N50C3, SPP02N60C3, SPP02N60S5, AON7408, SPP03N60C3, SPP03N60S5, SPP04N50C3, SPP04N60C3, SPP04N60S5, SPP04N80C3, SPP06N60C3, SPP06N80C3
Keywords - SPP02N80C3 MOSFET specs
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