Справочник MOSFET. SPP02N80C3

 

SPP02N80C3 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SPP02N80C3
   Маркировка: 02N80C3
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 42 W
   Предельно допустимое напряжение сток-исток |Uds|: 800 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
   Пороговое напряжение включения |Ugs(th)|: 3.9 V
   Максимально допустимый постоянный ток стока |Id|: 2 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 12 nC
   Время нарастания (tr): 15 ns
   Выходная емкость (Cd): 13 pf
   Сопротивление сток-исток открытого транзистора (Rds): 2.7 Ohm
   Тип корпуса: TO220

 Аналог (замена) для SPP02N80C3

 

 

SPP02N80C3 Datasheet (PDF)

 ..1. Size:444K  infineon
 spp02n80c3.pdf

SPP02N80C3 SPP02N80C3

SPP02N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 2.7DS(on)max Extreme dv/dt ratedQ 12 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO220-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effe

 8.1. Size:456K  infineon
 spp02n60c3.pdf

SPP02N80C3 SPP02N80C3

P VDS Tjmax G G

 8.2. Size:935K  infineon
 spp02n60s5.pdf

SPP02N80C3 SPP02N80C3

SPP02N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 3 New revolutionary high voltage technologyID 1.8 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking02N60S5SPP02N60S5 PG-TO220 Q67040-S418

 8.3. Size:247K  inchange semiconductor
 spp02n60c3.pdf

SPP02N80C3 SPP02N80C3

isc N-Channel MOSFET Transistor SPP02N60C3ISPP02N60C3FEATURESStatic drain-source on-resistance:RDS(on) 3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceABSOLUTE MAXIMUM RATINGS(T =25)a

 8.4. Size:246K  inchange semiconductor
 spp02n60s5.pdf

SPP02N80C3 SPP02N80C3

isc N-Channel MOSFET Transistor SPP02N60S5ISPP02N60S5FEATURESStatic drain-source on-resistance:RDS(on) 3Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUTE M

Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top