All MOSFET. SPP03N60S5 Datasheet

 

SPP03N60S5 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPP03N60S5
   Marking Code: 03N60S5
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 38 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5.5 V
   |Id|ⓘ - Maximum Drain Current: 3.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 12.4 nC
   trⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 150 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO220

 SPP03N60S5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPP03N60S5 Datasheet (PDF)

 ..1. Size:356K  infineon
 spp03n60s5.pdf

SPP03N60S5 SPP03N60S5

SPP03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking03N60S5SPP03N60S5 PG-TO220 Q67040-S4

 ..2. Size:247K  inchange semiconductor
 spp03n60s5.pdf

SPP03N60S5 SPP03N60S5

isc N-Channel MOSFET Transistor SPP03N60S5ISPP03N60S5FEATURESStatic drain-source on-resistance:RDS(on) 1.4Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUTE

 6.1. Size:593K  infineon
 spp03n60c3 spa03n60c3 spp03n60c3 spa03n60c3 .pdf

SPP03N60S5 SPP03N60S5

VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111

 6.2. Size:247K  inchange semiconductor
 spp03n60c3.pdf

SPP03N60S5 SPP03N60S5

isc N-Channel MOSFET Transistor SPP03N60C3ISPP03N60C3FEATURESStatic drain-source on-resistance:RDS(on) 1.4Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low current capabilityImproved transconductanceABSOLUTE MA

Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF640 , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .

History: PHB3N60E | PHD37N06LT

 

 
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