SPP03N60S5 - Даташиты. Аналоги. Основные параметры
Наименование производителя: SPP03N60S5
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 38 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 600 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 3.2 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 25 ns
Cossⓘ - Выходная емкость: 150 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
Тип корпуса: TO220
Аналог (замена) для SPP03N60S5
SPP03N60S5 Datasheet (PDF)
spp03n60s5.pdf
SPP03N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 1.4 New revolutionary high voltage technologyID 3.2 A Ultra low gate chargePG-TO220 Periodic avalanche rated2 Extreme dv/dt rated Ultra low effective capacitances321 Improved transconductanceP-TO220-3-1Type Package Ordering Code Marking03N60S5SPP03N60S5 PG-TO220 Q67040-S4
spp03n60s5.pdf
isc N-Channel MOSFET Transistor SPP03N60S5ISPP03N60S5FEATURESStatic drain-source on-resistance:RDS(on) 1.4Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUTE
spp03n60c3 spa03n60c3 spp03n60c3 spa03n60c3 .pdf
VDS Tjmax G FP G 3 21P-TO220-3-31 G ;-3-111
spp03n60c3.pdf
isc N-Channel MOSFET Transistor SPP03N60C3ISPP03N60C3FEATURESStatic drain-source on-resistance:RDS(on) 1.4Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low current capabilityImproved transconductanceABSOLUTE MA
Другие MOSFET... SPI20N60C3 , SPI20N60CFD , SPI20N65C3 , SPI21N50C3 , SPP02N60C3 , SPP02N60S5 , SPP02N80C3 , SPP03N60C3 , STP75NF75 , SPP04N50C3 , SPP04N60C3 , SPP04N60S5 , SPP04N80C3 , SPP06N60C3 , SPP06N80C3 , SPP07N60C3 , SPP07N60CFD .
Список транзисторов
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