SPP16N50C3 Specs and Replacement

Type Designator: SPP16N50C3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 160 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 800 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm

Package: TO220

SPP16N50C3 substitution

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SPP16N50C3 datasheet

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 spp16n50c3 spi16n50c3 spa16n50c3 spp16n50c3 spi16n50c3 spa16n50c3 rev.3.2.pdf pdf_icon

SPP16N50C3

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 ..2. Size:248K  inchange semiconductor
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SPP16N50C3

isc N-Channel MOSFET Transistor SPP16N50C3 ISPP16N50C3 FEATURES Static drain-source on-resistance RDS(on) 280m Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION New revolutionary high voltage technology Ultra low effective capacitance ABSOLUTE MAXIMUM ... See More ⇒

Detailed specifications: SPP11N65C3, SPP11N80C3, SPP12N50C3, SPP15N60C3, SPP15N60CFD, SPP15N65C3, SPP15P10PG, SPP15P10PLH, TK10A60D, SPP17N80C3, SPP18P06PH, SPP20N60C3, SPP20N60CFD, SPP20N60S5, SPP20N65C3, SPP21N50C3, SPP24N60C3

Keywords - SPP16N50C3 MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.