All MOSFET. SPP16N50C3 Datasheet

 

SPP16N50C3 Datasheet and Replacement


   Type Designator: SPP16N50C3
   Marking Code: 16N50C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 160 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.9 V
   |Id| ⓘ - Maximum Drain Current: 16 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 66 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 800 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.28 Ohm
   Package: TO220
 

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SPP16N50C3 Datasheet (PDF)

 ..1. Size:723K  infineon
 spp16n50c3 spi16n50c3 spa16n50c3 spp16n50c3 spi16n50c3 spa16n50c3 rev.3.2.pdf pdf_icon

SPP16N50C3

SPP16N50C3SPI16N50C3, SPA16N50C3Cool MOS Power TransistorVDS @ Tjmax 560 VFeatureRDS(on) 0.28 New revolutionary high voltage technologyID 16 A Ultra low gate chargePG-TO220FP PG-TO262 PG-TO220 Periodic avalanche rated2 Extreme dv/dt rated3 Ultra low effective capacitances2 3211P-TO220-3-31 Improved transconductanceP-TO220-3-1

 ..2. Size:248K  inchange semiconductor
 spp16n50c3.pdf pdf_icon

SPP16N50C3

isc N-Channel MOSFET Transistor SPP16N50C3ISPP16N50C3FEATURESStatic drain-source on-resistance:RDS(on) 280mEnhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONNew revolutionary high voltage technologyUltra low effective capacitanceABSOLUTE MAXIMUM

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

Keywords - SPP16N50C3 MOSFET datasheet

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