SPP18P06PH MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP18P06PH
Marking Code: 18P06P
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 81.1 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 18.7 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 21 nC
trⓘ - Rise Time: 5.8 nS
Cossⓘ - Output Capacitance: 230 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.13 Ohm
Package: TO220
SPP18P06PH Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP18P06PH Datasheet (PDF)
spp18p06pg spp18p06ph.pdf
SPP18P06PHSIPMOS Small-Signal-TransistorProduct SummaryFeaturesVDS -60 V P-ChannelRDS(on),max 0.13 Enhancement modeID -18.7 A Avalanche rated dv /dt ratedPG-TO220-3-1 175C operating temperature Pb-free lead finishing; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101Type Package Tape and reel
spp18p06ph .pdf
SPP18P06P H SIPMOS Power-TransistorProduct SummaryFeaturesV -60 VDS P-ChannelR 0.13DS(on),max Enhancement modeI -18.7 AD Avalanche rated dv /dt rated 175C operating temperature Pb-free lead finishing; RoHS compliant Halogen-free according to IEC61249-2-21 Qualified according to AEC Q101 Type Package Tape and reel information
spp18p06pg.pdf
SPP18P06PGwww.VBsemi.twP-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY VDS (V) RDS(on) () TrenchFET Power MOSFETID (A) Qg (Typ) 100 % UIS Tested0.062 at VGS = - 10 V - 20- 60 12.50.074 at VGS = - 4.5 V - 15 APPLICATIONS Load SwitchSTO-220ABGDG D STop ViewP-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise notedParameter
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
History: TPC8213-H
History: TPC8213-H
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