All MOSFET. SPP20N60C3 Datasheet

 

SPP20N60C3 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SPP20N60C3
   Marking Code: 20N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Maximum Power Dissipation (Pd): 208 W
   Maximum Drain-Source Voltage |Vds|: 600 V
   Maximum Gate-Source Voltage |Vgs|: 20 V
   Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V
   Maximum Drain Current |Id|: 20.7 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 87 nC
   Rise Time (tr): 5 nS
   Drain-Source Capacitance (Cd): 780 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm
   Package: TO220

 SPP20N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPP20N60C3 Datasheet (PDF)

 ..1. Size:683K  infineon
spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf

SPP20N60C3 SPP20N60C3

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

 ..2. Size:247K  inchange semiconductor
spp20n60c3.pdf

SPP20N60C3 SPP20N60C3

isc N-Channel MOSFET Transistor SPP20N60C3ISPP20N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE M

 5.1. Size:643K  infineon
spp20n60cfd.pdf

SPP20N60C3 SPP20N60C3

SPP20N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.22 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Pa

 5.2. Size:247K  inchange semiconductor
spp20n60cfd.pdf

SPP20N60C3 SPP20N60C3

isc N-Channel MOSFET Transistor SPP20N60CFDISPP20N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.22Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 6.1. Size:129K  infineon
spp20n60s5.pdf

SPP20N60C3 SPP20N60C3

SPP20N60S5Final dataSPB20N60S5Cool MOS Power TransistorVDS 600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunityType Package Ordering Cod

 6.2. Size:370K  infineon
spp20n60s5 .pdf

SPP20N60C3 SPP20N60C3

SPP20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Ordering Code Marking

 6.3. Size:246K  inchange semiconductor
spp20n60s5.pdf

SPP20N60C3 SPP20N60C3

isc N-Channel MOSFET Transistor SPP20N60S5ISPP20N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP450 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top