SPP20N60C3 Datasheet and Replacement

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

isc N-Channel MOSFET Transistor SPP20N60C3ISPP20N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE M

SPP20N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.22 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Pa

isc N-Channel MOSFET Transistor SPP20N60CFDISPP20N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.22Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

SPP20N60S5Final dataSPB20N60S5Cool MOS Power TransistorVDS 600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunityType Package Ordering Cod

SPP20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Ordering Code Marking

isc N-Channel MOSFET Transistor SPP20N60S5ISPP20N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT