SPP20N60C3 Datasheet: MOSFET, N-Ch, 600V, 20.7A. Full specification with pinout and replacement list

SPP20N60C3 Datasheet. Specs and Replacement

The SPP20N60C3 is a 600V, 20A N-channel power MOSFET designed for high-voltage switching applications such as SMPS, PFC stages, inverters, motor drives. It features low Rds(on) for its voltage class, fast switching behavior, rugged avalanche rating, which contribute to high efficiency and reliable operation under demanding conditions. The device is optimized for reduced switching losses and good thermal performance when properly heatsinked.
Advantages: high voltage capability, low conduction and switching losses, good ruggedness against transient overvoltage, wide availability in standard power packages.
Disadvantages: relatively high gate charge compared to low-voltage MOSFETs, requiring a strong gate driver; efficiency may drop at very high switching frequencies.
Usage Tips: ensure adequate gate drive voltage and current, minimize parasitic inductance in PCB layout, use proper snubber or clamp circuits to limit voltage spikes. Always verify thermal margins during repair or redesign to prevent overstress.

Type Designator: SPP20N60C3 📄📄

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 208 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 20.7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 5 nS

Cossⓘ - Output Capacitance: 780 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.19 Ohm

Package: TO220

📄📄 Copy

SPP20N60C3 substitution

- MOSFET ⓘ Cross-Reference Search

SPP20N60C3 datasheet

..1. Size:683K infineon
spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf pdf_icon

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transco... See More ⇒

..2. Size:247K inchange semiconductor
spp20n60c3.pdf pdf_icon

isc N-Channel MOSFET Transistor SPP20N60C3 ISPP20N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE M... See More ⇒

5.1. Size:643K infineon
spp20n60cfd.pdf pdf_icon

SPP20N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.22 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Pa... See More ⇒

5.2. Size:247K inchange semiconductor
spp20n60cfd.pdf pdf_icon

isc N-Channel MOSFET Transistor SPP20N60CFD ISPP20N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.22 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a... See More ⇒