All MOSFET. SPP20N60C3 Datasheet

 

SPP20N60C3 MOSFET. Datasheet pdf. Equivalent

Type Designator: SPP20N60C3

Marking Code: 20N60C3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 208 W

Maximum Drain-Source Voltage |Vds|: 600 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 3.9 V

Maximum Drain Current |Id|: 20.7 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 87 nC

Rise Time (tr): 5 nS

Drain-Source Capacitance (Cd): 780 pF

Maximum Drain-Source On-State Resistance (Rds): 0.19 Ohm

Package: TO220

SPP20N60C3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SPP20N60C3 Datasheet (PDF)

..1. spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf Size:683K _infineon

SPP20N60C3 SPP20N60C3

SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco

..2. spp20n60c3.pdf Size:247K _inchange_semiconductor

SPP20N60C3 SPP20N60C3

isc N-Channel MOSFET Transistor SPP20N60C3ISPP20N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE M

5.1. spp20n60cfd.pdf Size:643K _infineon

SPP20N60C3 SPP20N60C3

SPP20N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.22 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Pa

5.2. spp20n60cfd.pdf Size:247K _inchange_semiconductor

SPP20N60C3 SPP20N60C3

isc N-Channel MOSFET Transistor SPP20N60CFDISPP20N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.22Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a

 6.1. spp20n60s5.pdf Size:129K _infineon

SPP20N60C3 SPP20N60C3

SPP20N60S5Final dataSPB20N60S5Cool MOS Power TransistorVDS 600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunityType Package Ordering Cod

6.2. spp20n60s5 .pdf Size:370K _infineon

SPP20N60C3 SPP20N60C3

SPP20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Ordering Code Marking

 6.3. spp20n60s5.pdf Size:246K _inchange_semiconductor

SPP20N60C3 SPP20N60C3

isc N-Channel MOSFET Transistor SPP20N60S5ISPP20N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT

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