SPP20N60CFD
MOSFET. Datasheet pdf. Equivalent
Type Designator: SPP20N60CFD
Marking Code: 20N60CFD
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 208
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 20.7
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 95
nC
trⓘ - Rise Time: 15
nS
Cossⓘ -
Output Capacitance: 780
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.22
Ohm
Package:
TO220
SPP20N60CFD
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SPP20N60CFD
Datasheet (PDF)
..1. Size:643K infineon
spp20n60cfd.pdf 
SPP20N60CFDCI MOS Pwer TransistrVDS @ Tjmax 650 VFeatureRDS(on) 0.22 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery chargeType Pa
..2. Size:247K inchange semiconductor
spp20n60cfd.pdf
isc N-Channel MOSFET Transistor SPP20N60CFDISPP20N60CFDFEATURESStatic drain-source on-resistance:RDS(on) 0.22Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)a
5.1. Size:683K infineon
spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf
SPP20N60C3SPI20N60C3, SPA20N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20.7 A Worldwide best RDS(on) in TO 220PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated3 Extreme dv/dt rated21P-TO220-3-31 High peak current capability Improved transco
5.2. Size:247K inchange semiconductor
spp20n60c3.pdf
isc N-Channel MOSFET Transistor SPP20N60C3ISPP20N60C3FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeHigh peak current capabilityImproved transconductanceABSOLUTE M
6.1. Size:129K infineon
spp20n60s5.pdf
SPP20N60S5Final dataSPB20N60S5Cool MOS Power TransistorVDS 600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220P-TO263-3-2 P-TO220-3-1 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved noise immunityType Package Ordering Cod
6.2. Size:370K infineon
spp20n60s5 .pdf
SPP20N60S5Cool MOS Power TransistorVDS600 VFeatureRDS(on) 0.19 New revolutionary high voltage technologyID 20 A Worldwide best RDS(on) in TO 220PG-TO220 Ultra low gate charge2 Periodic avalanche rated Extreme dv/dt rated321 Ultra low effective capacitancesP-TO220-3-1 Improved transconductanceType Package Ordering Code Marking
6.3. Size:246K inchange semiconductor
spp20n60s5.pdf
isc N-Channel MOSFET Transistor SPP20N60S5ISPP20N60S5FEATURESStatic drain-source on-resistance:RDS(on) 0.19Enhancement modeFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONUltra low gate chargeUltra low effective capacitanceImproved transconductanceABSOLUT
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