SPP20N60CFD. Аналоги и основные параметры

Наименование производителя: SPP20N60CFD

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 208 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 600 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 20.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 15 ns

Cossⓘ - Выходная емкость: 780 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.22 Ohm

Тип корпуса: TO220

Аналог (замена) для SPP20N60CFD

- подборⓘ MOSFET транзистора по параметрам

 

SPP20N60CFD даташит

 ..1. Size:643K  infineon
 spp20n60cfd.pdf pdf_icon

SPP20N60CFD

SPP20N60CFD C I MOS P wer Transist r VDS @ Tjmax 650 V Feature RDS(on) 0.22 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220 Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated High peak current capability Intrinsic fast-recovery body diode Extreme low reverse recovery charge Type Pa

 ..2. Size:247K  inchange semiconductor
 spp20n60cfd.pdf pdf_icon

SPP20N60CFD

isc N-Channel MOSFET Transistor SPP20N60CFD ISPP20N60CFD FEATURES Static drain-source on-resistance RDS(on) 0.22 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a

 5.1. Size:683K  infineon
 spp20n60c3 spi20n60c3 spa20n60c3 spp20n60c3 spi20n60c3 spa20n60c3 rev3.2.pdf pdf_icon

SPP20N60CFD

SPP20N60C3 SPI20N60C3, SPA20N60C3 Cool MOS Power Transistor VDS @ Tjmax 650 V Feature RDS(on) 0.19 New revolutionary high voltage technology ID 20.7 A Worldwide best RDS(on) in TO 220 PG-TO220FP PG-TO262 PG-TO220 Ultra low gate charge Periodic avalanche rated 3 Extreme dv/dt rated 2 1 P-TO220-3-31 High peak current capability Improved transco

 5.2. Size:247K  inchange semiconductor
 spp20n60c3.pdf pdf_icon

SPP20N60CFD

isc N-Channel MOSFET Transistor SPP20N60C3 ISPP20N60C3 FEATURES Static drain-source on-resistance RDS(on) 0.19 Enhancement mode Fast Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Ultra low gate charge High peak current capability Improved transconductance ABSOLUTE M

ПОКАЗАТЬ ЕЩЁ

Другие IGBT... SPP15N60CFD, SPP15N65C3, SPP15P10PG, SPP15P10PLH, SPP16N50C3, SPP17N80C3, SPP18P06PH, SPP20N60C3, IRFP250, SPP20N60S5, SPP20N65C3, SPP21N50C3, SPP24N60C3, SPP24N60CFD, SPP80P06PH, SPS01N60C3, SPS02N60C3