SPS02N60C3 Specs and Replacement
Type Designator: SPS02N60C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 3 nS
Cossⓘ - Output Capacitance: 90 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO251-SL
SPS02N60C3 substitution
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SPS02N60C3 datasheet
Detailed specifications: SPP20N60CFD, SPP20N60S5, SPP20N65C3, SPP21N50C3, SPP24N60C3, SPP24N60CFD, SPP80P06PH, SPS01N60C3, 18N50, SPS03N60C3, SPS04N60C3, SPU01N60C3, SPU02N60C3, SPU02N60S5, SPU03N60C3, SPU03N60S5, SPU04N60C3
Keywords - SPS02N60C3 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: BL8N60-P | FQD1N60CTF
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