All MOSFET. BF545C Datasheet

 

BF545C MOSFET. Datasheet pdf. Equivalent


   Type Designator: BF545C
   Marking Code: M67
   Type of Transistor: FET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 0.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs(off)|ⓘ - Minimum Gate-to-Source Cutoff Voltage: 0.4 V
   |Id|ⓘ - Maximum Drain Current: 0.025 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 0.8 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 100 Ohm
   Package: SOT23

 BF545C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BF545C Datasheet (PDF)

 ..1. Size:69K  philips
 bf545a bf545b bf545c 2.pdf

BF545C BF545C

DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)

 ..2. Size:71K  philips
 bf545a bf545b bf545c.pdf

BF545C BF545C

BF545A; BF545B; BF545CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2

 9.1. Size:103K  motorola
 mmbf5457lt1rev0d.pdf

BF545C BF545C

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5457LT1/DJFET General PurposeMMBF5457LT1TransistorNChannel2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value Unit CASE 31808, STYLE 10SOT23 (TO236AB)DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcGate Current IG 10

 9.2. Size:100K  philips
 bf545a.pdf

BF545C BF545C

DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)

 9.3. Size:129K  fairchild semi
 2n5457 2n5458 2n5459 mmbf5457 mmbf5458 mmbf5459.pdf

BF545C BF545C

2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

 9.4. Size:55K  onsemi
 mmbf5457lt1-d.pdf

BF545C BF545C

MMBF5457LT1Preferred Device JFET - General Purpose TransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Source Voltage VDS 25 Vdc1 DRAINDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGS(r) -25 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS 3SOT-23 (TO-236)Charac

Datasheet: BF410C , BF410D , BF510 , BF511 , BF512 , BF513 , BF545A , BF545B , MMIS60R580P , BF556A , BF556B , BF556C , BF805 , BF861A , BF861B , BF861C , BF862 .

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