DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)

BF545A; BF545B; BF545CN-channel silicon junction field-effect transistorsRev. 03 5 August 2004 Product data sheet1. Product profile1.1 General descriptionN-channel symmetrical silicon junction field-effect transistors in a SOT23 package.CAUTIONThis device is sensitive to electrostatic discharge (ESD). Therefore care should be takenduring transport and handling.MSC8951.2

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF5457LT1/DJFET General PurposeMMBF5457LT1TransistorNChannel2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value Unit CASE 31808, STYLE 10SOT23 (TO236AB)DrainSource Voltage VDS 25 VdcDrainGate Voltage VDG 25 VdcReverse GateSource Voltage VGS(r) 25 VdcGate Current IG 10

DISCRETE SEMICONDUCTORSDATA SHEETBF545A; BF545B; BF545CN-channel silicon junctionfield-effect transistorsProduct specification 1996 Jul 29Supersedes data of April 1995File under Discrete Semiconductors, SC07Philips Semiconductors Product specificationN-channel silicon junctionBF545A; BF545B; BF545Cfield-effect transistorsFEATURES Low leakage level (typ. 500 fA)

2N5457 MMBF54572N5458 MMBF54582N5459 MMBF5459GSTO-92GSSOT-23NOTE: Source & DrainDD are interchangeableMark: 6D / 61S / 6LN-Channel General Purpose AmplifierThis device is a low level audio amplifier and switching transistors,and can be used for analog switching applications. Sourced fromProcess 55.Absolute Maximum Ratings* TA = 25C unless otherwise notedS

MMBF5457LT1Preferred Device JFET - General Purpose TransistorN-Channelhttp://onsemi.comFeatures Pb-Free Package is Available2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Source Voltage VDS 25 Vdc1 DRAINDrain-Gate Voltage VDG 25 VdcReverse Gate-Source Voltage VGS(r) -25 VdcGate Current IG 10 mAdcTHERMAL CHARACTERISTICS 3SOT-23 (TO-236)Charac