All MOSFET. SPU01N60C3 Datasheet

 

SPU01N60C3 Datasheet and Replacement


   Type Designator: SPU01N60C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 11 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 0.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 25 nS
   Cossⓘ - Output Capacitance: 40 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 6 Ohm
   Package: TO251
 

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SPU01N60C3 Datasheet (PDF)

 ..1. Size:276K  1
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SPU01N60C3

SPU01N60C3Rev. 2.0SPD01N60C3Cool MOS Power TransistorVDS @ Tjmax 650 VFeatureRDS(on) 6 New revolutionary high voltage technologyID 0.8 A Ultra low gate chargeP-TO252 P-TO251-3-1 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductanceType Package Ordering Code MarkingSPU01N60C3 P-TO251-3-1 Q6

 ..2. Size:261K  inchange semiconductor
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SPU01N60C3

isc N-Channel MOSFET Transistor SPU01N60C3FEATURESWith TO-251(IPAK) packagingHigh speed switchingEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplyDC-DC convertersMotor controlSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE

Datasheet: SPP21N50C3 , SPP24N60C3 , SPP24N60CFD , SPP80P06PH , SPS01N60C3 , SPS02N60C3 , SPS03N60C3 , SPS04N60C3 , IRFB31N20D , SPU02N60C3 , SPU02N60S5 , SPU03N60C3 , SPU03N60S5 , SPU04N60C3 , SPU04N60S5 , SPU07N60C3 , SPU07N60S5 .

History: RXQ040N03 | WFY5N03

Keywords - SPU01N60C3 MOSFET datasheet

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