SPU02N60S5 Specs and Replacement
Type Designator: SPU02N60S5
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 1.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 35 nS
Cossⓘ - Output Capacitance: 77 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 3 Ohm
Package: TO251
SPU02N60S5 substitution
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SPU02N60S5 datasheet
spu02n60s5 spd02n60s5.pdf
SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO2... See More ⇒
spd02n60s5 spu02n60s5.pdf
SPU02N60S5 SPD02N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 3 New revolutionary high voltage technology ID 1.8 A Ultra low gate charge PG-TO252 PG-TO251 Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 02N60S5 SPU02N60S5 PG-TO2... See More ⇒
spu02n60s5.pdf
isc N-Channel MOSFET Transistor SPU02N60S5 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒
Detailed specifications: SPP24N60CFD, SPP80P06PH, SPS01N60C3, SPS02N60C3, SPS03N60C3, SPS04N60C3, SPU01N60C3, SPU02N60C3, IRFZ24N, SPU03N60C3, SPU03N60S5, SPU04N60C3, SPU04N60S5, SPU07N60C3, SPU07N60S5, SPW07N60CFD, SPW11N60C3
Keywords - SPU02N60S5 MOSFET specs
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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