SPU04N60S5 PDF and Equivalents Search

 ..1. Size:268K  1
 spd04n60s5 spu04n60s5.pdf

SPU04N60S5 SPD04N60S5 Cool MOS Power Transistor VDS 600 V Feature RDS(on) 0.95 New revolutionary high voltage technology ID 4.5 A Ultra low gate charge P-TO252. P-TO251. Periodic avalanche rated Extreme dv/dt rated 2 3 Ultra low effective capacitances 3 1 2 1 Improved transconductance Type Package Ordering Code Marking 04N60S5 SPU04N60S5 P-T... See More ⇒

 ..2. Size:261K  inchange semiconductor
 spu04n60s5.pdf

isc N-Channel MOSFET Transistor SPU04N60S5 FEATURES With TO-251(IPAK) packaging High speed switching Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Power supply DC-DC converters Motor control Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE ... See More ⇒

 6.1. Size:744K  infineon
 spd04n60c3 spu04n60c3.pdf

VDS Tjmax G G G G ... See More ⇒

 6.2. Size:853K  cn vbsemi
 spu04n60c3.pdf

SPU04N60C3 www.VBsemi.tw N hannel 650 D S Power MOSFET FEATURES PRODUCT SUMMARY Low Gate Charge Qg Results in Simple Drive VDS (V) 650 Requirement RoHS RDS(on) ( )VGS = 10 V 2.0 COMPLIANT Improved Gate, Avalanche and Dynamic dV/dt Qg (Max.) (nC) 48 Ruggedness Qgs (nC) 12 Fully Characterized Capacitance and Avalanche Voltage and Current Qgd (nC) 19 Compli... See More ⇒

 6.3. Size:208K  inchange semiconductor
 spu04n60c3.pdf

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SPU04N60C3 FEATURES With To-251(IPAK) package New revolutionary high voltage technology Ultra low gate charge High peak current capability Improved transconductance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications A... See More ⇒