All MOSFET. SPW17N80C3 Datasheet

 

SPW17N80C3 Datasheet and Replacement


   Type Designator: SPW17N80C3
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 227 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 17 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
   Package: TO247
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SPW17N80C3 Datasheet (PDF)

 ..1. Size:505K  infineon
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SPW17N80C3

SPW17N80C3CoolMOSTM Power TransistorProduct SummaryFeaturesV 800 VDS New revolutionary high voltage technologyR @ Tj = 25C 0.29DS(on)max Extreme dv/dt ratedQ 88 nCg,typ High peak current capability Qualified according to JEDEC1) for target applicationsPG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff

 ..2. Size:245K  inchange semiconductor
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SPW17N80C3

isc N-Channel MOSFET Transistor SPW17N80C3ISPW17N80C3FEATURESStatic drain-source on-resistance:RDS(on)290mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITION High peak current capabilityABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltag

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: SM6A12NSFP | FCPF7N60YDTU

Keywords - SPW17N80C3 MOSFET datasheet

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