SPW17N80C3 Specs and Replacement
Type Designator: SPW17N80C3
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 227 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 17 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 94 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.29 Ohm
Package: TO247
SPW17N80C3 substitution
- MOSFET ⓘ Cross-Reference Search
SPW17N80C3 datasheet
spw17n80c3.pdf
SPW17N80C3 CoolMOSTM Power Transistor Product Summary Features V 800 V DS New revolutionary high voltage technology R @ Tj = 25 C 0.29 DS(on)max Extreme dv/dt rated Q 88 nC g,typ High peak current capability Qualified according to JEDEC1) for target applications PG-TO247-3 Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low eff... See More ⇒
spw17n80c3.pdf
isc N-Channel MOSFET Transistor SPW17N80C3 ISPW17N80C3 FEATURES Static drain-source on-resistance RDS(on) 290m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION High peak current capability ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltag... See More ⇒
Detailed specifications: SPW11N60C3, SPW11N60CFD, SPW11N60S5, SPW11N80C3, SPW12N50C3, SPW15N60C3, SPW15N60CFD, SPW16N50C3, AON7403, SPW20N60C3, SPW20N60CFD, SPW20N60S5, SPW21N50C3, SPW24N60C3, SPW24N60CFD, SPW32N50C3, SPW35N60C3
Keywords - SPW17N80C3 MOSFET specs
SPW17N80C3 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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